A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors de...

In this paper various mixers are defined for CDMA applications . Using CMOS makes easier for mixers to act on same chip with other digital and analog circuits . The topologies we are defining are dual gate mixers , back gate mixers, single balanced current switching mixers and back end mixers . The backgate mixer utilizes the inherent lateral bipolar transistor in CMOS. Device simulations were ...

The authors report a new p-n-p surface accumulation layer transistor (SALTran) on SOI, which uses the concept of surface accumulation of holes near the emitter contact to significantly improve the current gain. Using two-dimensional simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of the previously published conventional...

One of the key limits of high-frequency operation of bipolar transistors is the base transient time, which is proportional to the square of the base width when the base transport is dominated by diffusion. Consequently, high-frequency bipolar transistors tend to use thin bases (<100 nm) that results in a short base transient time and a high cut-off frequency fT. However, for high frequency oper...

The availability of Silicon Germanium (SiGe) Heterojunction Bipolar Tkansistor (HBT) devices has opened a door for GHz Field Programmable Gate Arrays (FPGAs).ls2 The integration of high-speed SiGe HBTs and low-power CMOS gives a significant speed advantage t o SiGe FPGAs over CMOS FPGAs. In the past, high static power consump tion discouraged the pursuit of bipolar FPGAs from being scaled up si...

In this paper the distortion components are defined for elementary transistor stages such as a single-transistor amplifier and a differential pair using bipolar transistors or MOST’s. Moreover, the influence of feedback is examined. Numerical examples are given for sake of illustration.

A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case...

Introduction This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated in a ...

For the iirst time, we show a departure from the conventional dependence of fi on base thickness xs in abrupt junction n-p-n heterojunction bipolar transistors (HBTs). This is to be contrasted with the familiar fl a l/xi found in homojunction bipolar transistors where current gain is limited by diffusive base transport. Our data, combined with high frequency and collector breakdown measurements...