Gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices, which have wide application potential from power amplifiers to satellite, need be thoroughly examined in terms of reliability order benefit the superior intrinsic properties device. The most critical parameter device is hotspot, or <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org...

We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; ev...

AlGaN/GaN HEMT is one of attractive candidates for next generation high power devices because of high carrier mobility in 2DEG channels and high breakdown voltage due high critical electric field. In order to apply the AlGaN/GaN HEMTs for power switching applications the normally off operation is required. Enhancement type behavior of GaN HEMT transistors is obtained by using p-type Mg-doped Ga...

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) dissipate high power densities which generate hotspots and cause thermomechanical problems. Here, we propose and simulate GaN-based HEMT technologies that can remove power densities exceeding 30 kW/cm at relatively low mass flow rate and pressure drop. Thermal performance of the microcooler module is investigated by modeling both ...