Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for...

In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in late...

Surfaces that efficiently catalyse the oxygen reduction reaction (ORR) are highly desirable for applications in energy utilization. Here, we computationally investigate the ORR on hexagonal boron nitride (h-BN) supported on Ni, Cu, and Co. We find a significant influence of the metal on the reaction energetics. In particular, h-BN/Cu is predicted to catalyse the ORR with a low overpotential, wh...

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture wel...

Let Bn be the set of all n by n Boolean matrices, and let H~ = {A E Bn : Ak is a Hall matrix for every sufficiently large integer k}. We provide upper estimates on the strict Hall exponents of microsymmetric matrices in H~; furthermore, we obtain the maximum value of the strict Hall exponents of symmetric matrices in H~.

The reaction of [Ru(C(9)H(10)BN(6))Cl(C(18)H(15)P)(2)] with benzo-nitrile leads to crystals of the title compound, [Ru(C(9)H(10)BN(6))Cl(C(18)H(15)P)(C(7)H(5)N)]·C(2)H(5)OH. In the crystal structure, the environment about the ruthenium metal center corresponds to a slightly distorted octa-hedron with an average N-Ru-N bite angle of the Tp ligand of 86.6 (2)°.

Hexagonal boron nitride (h-BN) is a promising twodimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown waferscale (∼25 cm) h-BN sheets ranging in thickness from 1 to 20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obta...

Abstract We fabricate the graphene/h-BN stacked mechanical resonator and investigate gate voltage dependence of resonance property resonator. The mode splitting on is found at a specific region, where frequency difference two peaks corresponding to modes showed square dependence. This implies that observed electrostatic attraction graphene layer influences interlayer interaction h-BN. energy tr...

Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitrid...

The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive...