High ZT value and large Seebeck coefficient have been reported in the nanostructured Fe-doped Si–Ge alloys. In this work, systems was qualitatively reproduced from computed electronic density of states, where a hybrid functional, HSE06, used for an exchange-correlation as well special quasi-random structure (SQS) disordered atomic configuration. Furthermore, by replacing Fe with other transitio...

Schottky barrier contact has been fabricated by thermal deposition of Al on (100) p-Ge (impurity concentratioñ1010/cm3 at 80K) that shows n-type conductivity above 180K due to thermally generated carriers. Both p and Ge exhibits ideal behavior with low reverse current near unity ideality factors obtained from the linear form temperature dependent current-voltage (I–V) characteristics. The diode...

We present an in-situ method for MEMS (microelectromechanical systems) microphone sensitivity optimization via the growth/retraction of nanoelectrodeposits to achieve high directionality in hearing aid applications. Using a DC bias at room temperature, nanoelectrodeposits are electrochemically deposited and dissolved on a Ag-doped Ge-Se solid electrolyte film on a microphone diaphragm. The grow...

An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially availab...

We perform density-functional calculations on the influence of external electric fields and electrons or holes injected into surface states on the relative stability of c(4x2) and p(2x2) reconstructed Si(001) surfaces. It is shown that an electric field parallel to the [001] direction or the insertion of electrons into surface states favors the formation of p(2x2) periodicities. Our results exp...

Charge transport across tunneling junctions of n-doped Ge has been investigated experimentally and theoretically. Using tunneling spectroscopy we were able to observe the density of states and the effect of the electron-electron interaction on the excitation spectrum of samples, in which hopping is the transport mechanism close to equilibrium. To analyze the data of the measurements we derive a...

Related Articles Negative effect of crystallization on the mechanism of laser damage in a HfO2/SiO2 multilayer J. Appl. Phys. 112, 123103 (2012) Anomalous transport of Sb in laser irradiated Ge Appl. Phys. Lett. 101, 172110 (2012) Pulsed laser operated high rate charging of Fe-doped LiNbO3 crystal for electron emission J. Appl. Phys. 112, 073107 (2012) Formation of nanostructured TiO2 by femtos...

We developed a hybrid analog/digital lightwave neuromorphic processing device that effectively performs signal feature recognition. The approach, which mimics the neurons in a crayfish responsible for the escape response mechanism, provides a fast and accurate reaction to its inputs. The analog processing portion of the device uses the integration characteristic of an electro-absorption modulat...

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enh...

Related Articles Negative effect of crystallization on the mechanism of laser damage in a HfO2/SiO2 multilayer J. Appl. Phys. 112, 123103 (2012) Anomalous transport of Sb in laser irradiated Ge Appl. Phys. Lett. 101, 172110 (2012) Pulsed laser operated high rate charging of Fe-doped LiNbO3 crystal for electron emission J. Appl. Phys. 112, 073107 (2012) Formation of nanostructured TiO2 by femtos...