This paper clarifies the effect of gate inductance $L_{g}$ inside IGBT modules on voltage spikes when a digital driver is employed. Three with different were fabricated to implement double pulse tests by conventional driving and contr...

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily usi...

We discuss the possibility of developing high-quality oating-gate memories and circuits in digital CMOS technologies that have only one layer of polysilicon. Here, the primary concern is whether or not we can get adequate control-gate linearity from MOS capacitors. We employ two experimental proceedures to address this issue and nd acceptable oating-gate circuit behavior with MOS capacitors. Fi...

In this paper, we present a solution to the ultra low voltage inverter by adding a keeper transistor in order to make the semi-floating-gate more stable and to reduce the current dissipation. Moreover, we also present a differential ULV inverter and elaborate on the reliability and fault tolerance of the gate. The differential ULV gate compared to both a former ULV gate and standard CMOS are gi...

Here, a new fuzzy direct torque control algorithm for induction motors is proposed. As in the classical direct torque control, the inverter gate control signals directly come from the optimum switching voltage vector look-up table, the best voltage space vector selection is a key factor to obtain minimum torque and flux ripples. In the proposed approach, the best voltage space vector is sel...

The need for novel digital logic styles for both ultra low supply voltage and low power applications is more and more evident. Especially, for hand held and mobile equipement, the power and supply voltage are important aspects to consider when designing both analog and digital systems. The digital circuits shrink rapidly with the introduction of recent semiconductor processes. The energy requir...

A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS tec...

This paper presents a 6 transistor fully differential dualended low-voltage (ULV) FGUVMOS operational transconductance amplifier (FGUVMOS-OTA), and a Gm-C filter where the FGUVMOS-OTA is used. The OTA has rail-torail operation. A basic Gm-C filter implemented with the OTA is presented. The cut-off frequency of the filter is tunable over almost 6 decades with a supply voltage below 1V.

Ion channels are naturally occurring pores through the proteins that regulate the passage of ions and thus maintain the concentration of ions inside and outside the cell. The ion channels control many physiological functions and they can show selectivity for a specific ion. Ion channels are mostly observed in nerve cells and muscle cells. The influx of ions into cells can be regulated by a gate...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...