This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN proce...

Using metallorganic vapor-phase epitaxy, thin films of gallium nitride activated by Eu3+ GaN:Eu3+ have been deposited on sapphire substrates at atmospheric pressure. Luminescence from Eu3+ ions in GaN has been investigated using photoluminescence PL and PL excitation spectroscopy. Experimental results show that Eu3+ ions are excited via energy transfer from the host. Analyses of the observed em...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

In order to reduce the effort needed to create self-separated, freestanding gallium nitride (GaN) layers by thick growth in hydride vapor phase epitaxy (HVPE), we established a two-step facet-controlled lateral overgrowth (FACELO) process in HVPE. Just as for the metalorganic vapor phase epitaxy (MOVPE) FACELO process, the template is produced by MOVPE growth directly on sapphire. This initial ...