A bipolar transistor structure is proposed having application for either high frequency operation or integration with certain types of light emitting devices. The structure involves liquid phase epitaxially grown layers of GaAs for the collector and base regions, and of Ga,_,Al,As for the heterojunction emitter. The high frequency potential of this device results primarily from the high electro...

ÐThe e€ects of screening on the polar optical phonon scattering rates and on the transport properties of the two-dimensional electron gas in AlGaAs/GaAs modulation doped heterostructures have been investigated through Monte Carlo simulations incorporating the three valleys of the conduction band, size quantization in the G valley and the lowest three subbands in the quantum-well. At typical she...

Shubnikov-de Haas oscillations in selectively doped GaAs single quantum wells with AlAs/GaAs superlattice barriers has been studied at temperature T=4.2 K magnetic fields B<1 T. High-mobility heterostructures thin spacer had grown by molecular-beam epitaxy on (001) substrates. The mobilities of two-dimensional electron gas measured two crystallographic directions [110] and differ from ea...

A set of single quantum well (SQW) samples GaAs 1- x Bi with ~ 0.1 and p -doped barriers grown by molecular beam epitaxy was investigated the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, smooth surface sharp interfaces between layers exhibited PL intensity lower than 100 meV linewidth QW structures. Temperature depende...

The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs). The calculations are done within a self-consistent approach to the k→⋅p→ theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local densit...