Protein nanowires exhibiting specific biological activities hold promise for interacting with living cells and controlling and predicting biological responses such as apoptosis, endocytosis and cell adhesion. Here we report the result of the interaction of a single high-energy charged particle with protein molecules, giving size-controlled protein nanowires with an ultra-high aspect ratio of ov...

Bulk gallium oxide (Ga2O3) has been widely used in lasers, dielectric coatings for solar cells, deep-ultraviolet transistor applications due to the large band gap over 4.5 eV. With miniaturization of electronic devices, atomically thin Ga2O3 monolayer unveiled recently, which features an asymmetric configuration with a quintuple-layer atomic structure. The superior stability, strain-tunable pro...

Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum, and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH(3) and evaporated aluminum at an elevated temperature to be converted into densely pack...

Thermodynamic analyses and experimental demonstrations were performed to investigate whether cation-exchange reactions (CERs) with metal chloride gases are a feasible technique for forming heterostructures of group-III sesquioxides. The thermodynamic revealed the possibility formation aluminum oxide (Al2O3) layers on gallium (Ga2O3) or indium (In2O3) substrates via CERs gases, as well Ga2O3 In2...

Crystalline γ-Ga2O3@rGO core–shell nanostructures are synthesized in gram scale, which accomplished by a facile sonochemical strategy under ambient condition. They composed of uniform γ-Ga2O3 nanospheres encapsulated reduced graphene oxide (rGO) nanolayers, and their formation is mainly attributed to the existed opposite zeta potential between Ga2O3 rGO. The as-constructed lithium-ion batteries...

Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting sputter-deposited p-type NiO forming p–n junction thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm−3) β-Ga2O3 substrates, exhibited breakdown voltages >8 kV over large areas (>1 cm2). The key requirements were low layer doping concentrations (<1016 cm...

Structures and energetics of various types of silicon nanowires have been investigated using both quantum and classical molecular dynamics simulations to determine the most stable forms. The tetrahedral type nanowires have been found to be the most stable and, surprisingly, the polycrystalline forms of nanowires, while having the smallest surface to bulk ratio, are found to be the least stable....

Structures and energetics of various types of silicon nanowires have been investigated using quantum molecular dynamics simulations to determine the most stable forms. The tetrahedral type nanowires oriented in the 111 direction are found to be the most stable. The stability of the cagelike nanowires is determined to lie somewhere between this and tetrahedral nanowires oriented in other directi...

We have theoretically demonstrated that phonon heat flux can be significantly suppressed in Si and Si/SiO2 nanowires with the periodically modulated cross-section area—referred to as the cross-section-modulated nanowires—in comparison with the generic uniform cross-section nanowires. The phonon energy spectra were obtained using the five-parameter Born–von Karman-type model and the face-centere...

This thesis involves an extensive experimental and theoretical study of the thermoelectric-related transport properties of Bii_2Sb. nanowires, and presents a theoretical framework for predicting the electrical properties of superlattice nanowires. A template-assisted fabrication scheme is employed to synthesize Bi-based nanowires by pressure injecting liquid metal alloys into the hexagonally pa...