This paper reports on swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer. Transmission electron microscopy and selected area diffraction patterns have been used to study the epitaxial growth of the buried Si3N4 layer. We observe good epitaxial crystallization at 150 C and 200 C, respectively for 70 MeV Si and 100 MeV Ag ions at an ion fluence of 1 × 10 ions cm. The f...

Titanium and vanadium dioxide systems were selected to study the MOCVD process for the growth of oxide epitaxial films. Single-crystal Ti02 and V02 films in single and multilayered configurations have been successfully grown on sapphire (a-Al203) single-crystal substrates. Seven distinct epitaxial orientation relationships between the films and the substrates were observed. Discussion on these ...

The fabrication of monodisperse nanostructures of highly controlled size and morphology with spatially distinct functional regions is a current area of high interest in materials science. Achieving this control directly in a biologically relevant solvent, without affecting cell viability, opens the door to a wide range of biomedical applications, yet this remains a significant challenge. Herein...

We report the epitaxial growth of thin films of a small organic molecule (pentacene) on polymer substrates with controllable photoalignment over a wide range. The pentacene molecular plane exhibited a distinct orientational change from parallel to perpendicular relative to the polymer chain with increasing substrate polymer alignment. Each orientation consists of twinlike domains. Such characte...

The support of epitaxial films frequently determines their crystallographic orientation, which is of crucial importance for their properties. We report a novel way to alter the film orientation without changing the substrate. We show for the growth of CoO on the Ir(100) surface that, while the oxide grows in (111) orientation on the bare substrate, the orientation switches to (100) by introduci...