نتایج جستجو برای: doping intention

تعداد نتایج: 75161  

Journal: :Physical chemistry chemical physics : PCCP 2015
Philomena Schlexer Antonio Ruiz Puigdollers Gianfranco Pacchioni

The charge state of Ag and Au atoms and clusters (Ag4 and Au4, Ag5 and Au5) adsorbed on defective TiO2 anatase(101) and tetragonal ZrO2(101) has been systematically investigated as a function of oxide doping and defectivity using a DFT+U approach. As intrinsic defects, we have considered the presence of oxygen vacancies. As extrinsic defects, substitutional nitrogen- and niobium-doping have bee...

2015
Magnus Berggren

Organic light-emitting electrochemical cells (LEC) are promising for lighting applications but in many cases these devices suffer from unbalanced electrochemical doping, which cause instability and degradation of the cells. A predominant p-doping over n-doping causes an off-centered emissive p-n junction, which leads to poor powerconversion efficiency. Here, we report a half-gate LEC transistor...

2011
Damir Sekulić

Although the issue of doping an substances is one of the very popular scientifi c topics in the world, these kinds of research are very rare in Croatia. Th is paper looks at some aspects of using doping and substances in sport and discusses the reasons which have been considered to be fundamental for the growth of this problem lately, based on the professional and scientifi c experience of the ...

2009
Yu-Chia Chang Yan Zheng John H. English Andrew W. Jackson Larry A. Coldren

The authors report the design and performance of a versatile carbon doping system for solid-source molecular beam epitaxy using carbon tetrabromide !CBr4". This system is capable to achieve three orders of magnitude in doping by changing the CBr4 temperature along with varying the CBr4 leak rate into the growth chamber. The CBr4 temperature is controlled using thermoelectric coolers and thus ca...

2006
S. Chikara V. Durairaj W. H. Song Y. P. Sun X. N. Lin A. Douglass P. Schlottmann S. Parkin

An investigation of La and Ca doped Sr4Ru3O10, featuring a coexistence of interlayer ferromagnetism and intralayer metamagnetism, is presented. La doping readily changes magnetism between ferromagnetism and metamagnetism by tuning the density of states. It also results in different Curie temperatures for the c-axis and the basal plane, highlighting a rare spin-orbit coupling with the crystal fi...

Journal: :Small 2012
Yaping Wu Wei Jiang Yujie Ren Weiwei Cai Wi Hyoung Lee Huifeng Li Richard D Piner Cody W Pope Yufeng Hao Hengxing Ji Junyong Kang Rodney S Ruoff

Au nanoparticles and films are deposited onto clean graphene surfaces to study the doping effect of different Au configurations. Micro-Raman spectra show that both the doping type and level of graphene can be tuned by fine control of the Au deposition. The morphological structures of Au on graphene are imaged by transmission electron microscopy, which indicate a size-dependent electrical charac...

2003
A. C. Mclaughlin J. P. Attfield I. Felner

Three Gd22xCexRuSr2Cu2O102d samples (x50.5, as prepared and after high pressure oxygenation and x 50.7) have been investigated by synchrotron powder x-ray diffraction and magnetization measurements. Precise coordinates and site occupancies for the oxygen atoms have been refined from the x-ray experiments. Estimates of the hole doping of the copper oxide planes based on the bond lengths, via the...

2015
Mario Hofmann Ya-Ping Hsieh Kai-Wen Chang He-Guang Tsai Tzung-Te Chen

Graphene's low intrinsic carrier concentration necessitates extrinsic doping to enhance its conductivity and improve its performance for application as electrodes or transparent conductors. Despite this importance limited knowledge of the doping process at application-relevant conditions exists. Employing in-situ carrier transport and Raman characterization of different dopants, we here explore...

Journal: :Physical review letters 2010
T Mairoser A Schmehl A Melville T Heeg L Canella P Böni W Zander J Schubert D E Shai E J Monkman K M Shen D G Schlom J Mannhart

Rare earth doping is the key strategy to increase the Curie temperature (T(C)) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T(C) increase, however, are yet to be understood. We report measurements of n and T(C) of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T(C),...

2003
R. S. MARKIEWICZ

Recent ARPES measurements on the electron-doped cuprate Nd2−xCexCuO4 can be interpreted in a mean field model of uniform doping of an antiferromagnet, with the Mott gap closing near optimal doping. Mode coupling calculations confirm the mean field results, while clarifying the relation between the Mott gap and shortrange magnetic order. The same calculations find that hole doped cuprates should...

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