Well-behaved and reproducible n-type doping of Si and Sir -$e, by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017-10’9 cmp3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The do...

The development and application of nitride-based light-emitting diodes (LEDs) is handicapped by the low hole conductivity of Mg-doped layers. Mg-doping becomes increasingly difficult with higher Al-content of the p-AlGaN layers as required for ultraviolet (UV) light emission. Polarization-induced hole doping of graded AlGaN was recently demonstrated as an alternative doping method. Using advanc...

A software has been developed that is aimed at quantitative analysis of images acquired by isoelectric focusing and double blotting procedures used for recombinant erythropoietin doping control. It represents a unified and easy-to-use tool for Epo doping experts in WADA accredited laboratories. It is based on image segmentation philosophy that enables identification of individual bands whose ch...

We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rat...

Controlled doping of carbon nanotubes is elemental for their electronic applications. Here we report an approach to tune the polarity and degree of doping of single-walled carbon nanotubes via filling with nickelocene followed by encapsulated reactions. Using Raman, photoemission spectroscopy and transmission electron microscopy, we show that nickelocene molecules transform into nickel carbides...

We report that four properties of cuprates and their evolution with doping are consequences of simply counting four-site plaquettes arising from doping, (1) the universal Tc phase diagram (superconductivity between∼0.05 and ∼0.27 doping per CuO2 plane and optimal Tc at ∼0.16), (2) the universal doping dependence of the room-temperature thermopower, (3) the superconducting neutron spin resonance...

We introduce a new class of spin-on dopants composed of organic, dopant-containing polymers. These new dopants offer a hybrid between conventional inorganic spin-on dopants and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles. We demonstrate the ability of polymer film doping to achieve both p-type and n-type silicon by...

The influence of B203 on the microshucture and magnetic properties of pure Mn-Zn ferrites has been investigated. A citrate gel processing route was employed to produce highly homogeneous Mn-Zn (MQ,~,Z~.,F~,,OJ ferrites undoped or doped with B203 (0-2.5wt%). The results show that B203 doping does not benefit the magnetic properties of these femtes, but promoted grain growth significantly. The in...

To enable preventive measures to be designed, it is important to identify modifiable distal and proximal factors underlying doping behaviour. This study investigated aspects of the prototype willingness model in relation to doping. A cross-sectional study was conducted involving 729 competitive athletes. Following ethical approval, athletes (mean age= 28.8 ± 10.1 years; 63% male) completed an o...

We present a model that describes doping-induced contrast in photoelectron emission microscopy by including the effect of surface state distributions and doping-induced band gap reduction. To quantify the contrast, the photoyield from the valence band for near-threshold photoemission is calculated as a function of p-type doping concentration in Si~001!. Various surface state distributions appro...