An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...

The hot compaction of nanocrystalline TiO2 anatase powders is investigated using dilatometry. The constant rate of heating (CRH) method is applied to determine effective activation energies of the processes involved during sintering. Grain size and doping effects are studied, using dopant cations of different radius and charge: Zn, Al, Si, Nb. The results are interpreted by a mechanism includin...

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in...

We demonstrate an abrupt and box-shaped n/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n/p-junction diodes at 400 ◦C–600 ◦C, based on the...

Semiconductor nanowires (NWs) are very promising building blocks for future electronic and optoelectronic devices. Realizing this, nevertheless, requires overcoming several important challenges, such as control and evaluation of doping levels in NWs. Due to the nanoscale nature of NWs, characterization techniques, such as Hall effect measurements and four-point probes, used conventionally for t...

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET" (2008). Birck and NCN Publications. Paper 129.

Dopant-stabilized defect centers in alumina nanopowders are shown to be well-suited to efficient generation of ultraviolet cathodoluminescence. r 2006 Elsevier B.V. All rights reserved.

This paper [1], together with its companion [2], Resistivity-Dopant Density Relationship for BoronDoped Silicon, documents the work done from about 1975 to 1980 to obtain a more accurate relationship between the resistivity and dopant density of silicon. The conversion between these two material properties is widely used in the semiconductor industry since silicon is the primary material which ...