Features u Automatic component identification ⇒ Bipolar transistor, with or without protection diode and/or B-E shunt resistor ⇒ Darlington transistors ⇒ Enhancement mode MOSFETs ⇒ Junction FETs ⇒ Triac ⇒ Thyristors ⇒ Diodes ⇒ Unijunction transistors u Automatic pinout identification for all the above components u Gain measurement for bipolar transistors u Test current display u VBE/IB measurem...

White-light emitting diode lamps for general illumination can be realized by a combination of a blue light-emitting diode semiconductor die and phosphors. Newly developed oxynitride and nitride phosphors are promising candidates for this application because they have suitable excitation and emission wavelengths and stable optical properties in a high temperature environment. High brightness war...

We have shown that external cavity stabilization can be a straightforward and powerful technique for converting diode lasers of poor spectral quality into useful tools for high precision laser spectroscopy. The method requires an anti-reflection coating on one facet of the diode laser but, contrary to popular belief, this is not difficult and does not require any specialized equipment. We descr...

We investigate experimentally the influence of the grating reflectivity, grating resolution, and diode facet antireflection (AR) coating on the intrinsic linewidth of an external-cavity diode laser built with a diffraction grating in a Littrow configuration. Grating lasers at 399, 780, and 852 nm are determined to have typical linewidths between 250 and 600 kHz from measurements of their freque...

In this paper, we demonstrate for the first time, a planar high voltage IGBT and freewheeling diode chip set with a blocking capability exceeding 8000V. The main aim is to show that a high performance IGBT can be achieved at this voltage level by implementing the “Soft-Punch-Through” (SPT) concept. Details of the IGBT and diode design and performance are presented. This includes, experimental r...

Absorption spectroscopy with tunable diode lasers (TDLAS) in the infrared region is a well-known technique for the chemical analysis of gas mixtures. The laser provides a high selectivity, which is important in industrial environments such as in-line stack monitoring, where complex gas mixtures are present. A wavelength tunable diode laser in the near infrared region has been utilized as a ligh...

We describe a novel layout for the measurement of the extracorporeal blood flow, performed by means of a laser diode placed directly in front of the blood vessel, without the need for any optical element. As the readout, we use the self-mixing interference in the laser diode due to light scattered by the red cells, whose Doppler shifted components comes from the intrinsic divergence of the lase...

This paper describes dark current characterization of two-stage charge transfer pixels, which enable a global shuttering and kTC noise canceling. The proposed pixel uses pinned diode structures for the photodiode(PD) as well as the storage diode(SD), thereby a very low dark current can be expected. The measured dark current of the PD and SD with the negative gate bias results in 19.5 e-/s and 7...

The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for b...

We describe transient spectroscopic measurements with a current-switched semiconductor diode laser. Following a fast pulse modulation in the injection current of the diode laser, the diode laser frequency is switched by a few hundred MHz and, then, is scanned over 10 GHz range in a short-time evolution (<0.5 μs). Free-induction decay based on the frequency switching and transient absorption spe...