نتایج جستجو برای: dimensional fet model

تعداد نتایج: 2410851  

Journal: :Neuro-oncology 2012
Nathalie L Jansen Christoph Schwartz Vera Graute Sabina Eigenbrod Jürgen Lutz Rupert Egensperger Gabriele Pöpperl Hans A Kretzschmar Paul Cumming Peter Bartenstein Jörg-Christian Tonn Friedrich-Wilhelm Kreth Christian la Fougère Niklas Thon

Oligodendroglial components (OC) and loss of heterozygosity on chromosomes 1p and 19q (LOH 1p/19q) are associated with better outcome in patients with glioma. We aimed to assess the fitness of [(18)F]fluoroethyltyrosine positron-emission-tomography (FET-PET) for noninvasively identifying these important prognostic/predictive factors. One hundred forty-four patients with MRI-suspected WHO grade ...

Journal: :Artificial organs 2002
Mirjana B Popovic Dejan B Popovic Thomas Sinkjaer Aleksandra Stefanovic Laszlo Schwirtlich

Functional electrical therapy (FET) is a new term describing a combination of functional electrical stimulation that generates life-like movement and intensive exercise in humans with central nervous system lesions. We hypothesized that FET can promote a significant recovery of functioning if applied in subacute stroke subjects. The study included 16 stroke subjects divided into a low functioni...

Journal: :npj 2D materials and applications 2023

Abstract The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and challenging owing to the physical limit Si materials. Monolithic three-dimensional (M3D) integration has been considered as a powerful scheme further boost up system performance. Two-dimensional (2D) materials such MoS 2 are potential building blocks for constructin...

Davar R Janati S Mohseni F,

Background: The aim of this prospective randomized clinical trial was to determine the optimal endometrial preparation protocol by comparing the clinical outcome of two methods of endometrial preparation in FET cycles, that is, oral estradiol and 17 β-estradiol transdermal patch. Materials and Methods: A total number of 90 patients were scheduled for FET. In the study group (n=45), 17-B estradi...

Journal: :2D materials 2022

Abstract Ferroelectricity at the nanometre scale can drive miniaturisation and wide application of ferroelectric devices for memory sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP 2 S 6 (CIPS) has attracted much attention due to its robust ferroelectricity found in thin layers room temperature. Also, unlike many 2D ferroelectrics, CIPS is a band gap semico...

Journal: :Microelectronics Journal 2008
X. H. Wang X. L. Wang C. Feng C. B. Yang B. Z. Wang J. X. Ran H. L. Xiao C. M. Wang J. X. Wang

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...

2005
MITSUAKI ISHII

The specific purpose of this case study was to investigate whether forced expiratory technique (FET) improves the peak expiratory flow compared to coughing in a 53-year-old man with amyotrophic lateral sclerosis (ALS) who presented with bulbar symptoms. Approximately 12 months after diagnosis, his peak cough flow did not exceed 160 L/min, and cough became ineffective. However, FET could generat...

2016
Ana Carolina Mazarin de Moraes Lauro Tatsuo Kubota

Immunosensors are analytical platforms that detect specific antigen-antibody interactions and play an important role in a wide range of applications in biomedical clinical diagnosis, food safety, and monitoring contaminants in the environment. Field-effect transistors (FET) immunosensors have been developed as promising alternatives to conventional immunoassays, which require complicated proces...

2012
Shigeo Maruyama Shinya Aikawa Rong Xiang Erik Einarsson Shohei Chiashi

Carbon nanotube field-effect transistor (CNT-FET) is a promising candidate for future electronic devices due to the excellent electronic properties. Recently, FET using CNTs as both electrodes and channel has been demonstrated [1]. The all-CNT devices can work on a flexible substrate without degrading their electrical properties [2,3] and may realize metal-free electronics. The fabrication tech...

2012
K. CHAKRAPANI

In modern portable devices, the supply voltage is decreased to reduce the power dissipation. However as the supply voltage is scaled down below 0.4V, the normal MOSFET devices cannot be used due to lower ION/ IOFF ratio which will reduce the static power dissipation. Hence for low power applications, Tunnel FET is used as alternatives due to their higher sub threshold swing, extremely low off s...

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