نتایج جستجو برای: dielectric film

تعداد نتایج: 127390  

2004
J. P. Huang L. Dong K. W. Yu

– We have derived the local electric field inside graded metal-dielectric composite films with weak nonlinearity analytically, which further yields the effective linear dielectric constant and third-order nonlinear susceptibility of the graded structures. As a result, the composition-dependent gradation can produce a broad resonant plasmon band in the optical region, resulting in a large enhanc...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2005
Myung-Han Yoon Antonio Facchetti Tobin J Marks

Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virt...

Journal: :Nanotechnology 2007
Ankam Bhaskar H Y Chang T H Chang S Y Cheng

Lead zirconate titanate (Pb(1.1)(Zr(0.52)Ti(0.48))O(3)) thin films of thickness 260 nm on Pt/Ti/SiO(2)/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 °C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 °C and the film was fully crystalliz...

2012
A. Soudi G. Aivazian S.-F. Shi X. D. Xu

Related Articles The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors APL: Org. Electron. Photonics 5, 21 (2012) Graphene-protein bioelectronic devices with wavelength-dependent photoresponse Appl. Phys. Lett. 100, 033110 (2012) Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidese...

2012
Sean W. King George A. Antonelli Gheorghe Stan Robert F. Cook R. Sooryakumar

As the semiconductor nano-electronics industry progresses toward incorporating increasingly lower dielectric constant materials as the inter layer dielectric (ILD) in Cu interconnect structures, thermo-mechanical reliability is becoming an increasing concern due to the inherent fragility of these materials. Therefore, the need for metrologies to assess the mechanical properties and elastic cons...

2015
An Quan Jiang Xiang Jian Meng David Wei Zhang Min Hyuk Park Sijung Yoo Yu Jin Kim James F. Scott Cheol Seong Hwang

The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate ...

2014
Qian Yang Wei Zhang Meiling Yuan Limin Kang Junxiao Feng Wei Pan Jun Ouyang

BaTiO3-CoFe2O4 composite films were prepared on (100) SrTiO3 substrates by using a radio-frequency magnetron co-sputtering method at 750 °C. These films contained highly (001)-oriented crystalline phases of perovskite BaTiO3 and spinel CoFe2O4, which can form a self-assembled nanostructure with BaTiO3 well-dispersed into CoFe2O4 under optimized sputtering conditions. A prominent dielectric perc...

Journal: :Journal of Physics: Conference Series 2007

Journal: :IEEJ Transactions on Fundamentals and Materials 1998

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