An efficient, self-powered ultraviolet photoelectrochemical photodetector based on n-GaN/p-Cu 2 O core–shell nanowire p–n heterojunctions is demonstrated. The photocurrent under solar light 2–3 times larger than that for GaN nanowires. photocurrents the and fraction are comparable, 100 µA/cm density. broad visible part about 3% of light. responsivity specific detectivity reach 961.5 µA/W 5.35 ×...

Narrowband photodetectors (PDs) are sought after for many applications requiring selective spectral response. The most common systems combine optical bandpass filters with broadband photodiodes. This work reports a method to obtain narrowband response in perovskite PD by the monolithic integration of photoconductor and photodiode. tandem is determined bandgap energy difference two perovskites, ...

Flexible image sensors with good detectivity, high mechanical stability, and excellent flexibility have generated great interest in biomimetic visual applications. Semiconductor nanowires (NWs) a unique geometric structure, transparency, electronic/optoelectronic properties can cater to flexible applications associated sensors. Herein, comprehensive review of semiconducting NWs is offered, the ...

Detection of circularly polarized light (CPL) accelerates the development various optical technologies, but additional quarter-wave plate and linear polarizer are required for conventional detectors, resulting in tremendous difficulty integration miniaturization devices. Herein, we fabricate pure (010)-orientated chiral one-dimensional (1D) perovskite microwire arrays with high crystallinity, s...

III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb–InAs strained layer superlattice, operation close to room temperature was demonstrated with cutoff wavelengths of 4.82 5.79 μm, respectively, zero-bias possible detector. X-ray diffraction, dependent dark current, spectral quantum efficiency measured, an...

2D ferroelectric \{beta}-InSe/graphene heterostructure was fabricated by mechanical exfoliation, and the carrier dynamics crossing interface has been systematically investigated Raman, photoluminescence transient absorption measurements. Due to efficient interfacial photo excited electron transfer photogating effect from trapped holes, devices demonstrate superior performance with maximum respo...

Abstract ZnO is a promising candidate for ultraviolet (UV) detectors due to its wide bandgap, good transparency, non-toxicity, low cost, and simple preparation. However, the performance of because high recombination rate. One alternative solution fabricating heterostructure with transition metal dichalcogenide (TMD) compound. This study proposes facile fabrication nanorods decorated MoSe 2 nano...