The photo-induced charge dynamics of textbook wide-bandgap semiconductor ZnO have been investigated on the picosecond time-scale. We performed optical Pump-THz Probe experiments in order to measure dielectric constant material after high-fluence photo-excitation carriers. technique allows access both carrier lifetime and scattering rates, it provides direct intrinsic function changes upon excit...

The e_ff~ct of l_ateral carrier diffusion upon the modulation characteristics of the semiconductor laser ts mvest~gated. ~ self-consistent analysis of the spatially dependent rate equations is performed usmg a fim~e ele_ment model. The transverse junction stripe laser is treated as an exam~le and a co~panson ts made between lateral carrier diffusion and spontaneous emission as dampmg ~echamsms ...

We have measured the terahertz response of oriented Germanium nanowires using ultrafast optical-pump terahertz-probe spectroscopy. We present results on the time, frequency, and polarization dependence of the terahertz response. Our results indicate intraband energy relaxation times of photoexcited carriers in the 1.5-2.0 ps range, carrier density dependent interband electron-hole recombination...

We have investigated the electronic structure and carrier mobility of four types of phosphorous monolayer sheet (α-P, β-P,γ-P and δ-P) using density functional theory combined with Boltzmann transport method and relaxation time approximation. It is shown that α-P, β-P and γ-P are indirect gap semiconductors, while δ-P is a direct one. All four sheets have ultrahigh carrier mobility and show ani...