This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process param...

Using the patch clamp technique the membrane capacitance and membrane conductance of colonic crypt cells of the rat was measured. The influence of the intracellular agonists Ca++, cAMP and of osmotic changes on the membrane capacitance and conductance was studied.

The data on which Medhurst's semi-empirical self-capacitance formula is based are re-analysed in a way that takes the permittivity of the coil-former into account. The updated formula is compared with theories attributing self-capacitance to the capacitance between adjacent turns, and also with transmission-line theories. The inter-turn capacitance approach is found to have no predictive power....

Expressions for the “quantum capacitance” are derived, and regimes are discussed in which this concept may be useful in modeling electronic devices. The degree of quantization is discussed for oneand two-dimensional systems, and it is found that two-dimensional (2D) metals and one-dimensional (1D) metallic carbon nanotubes have a truly quantized capacitance over a restricted bias range. For bot...

Submitted for the MAR13 Meeting of The American Physical Society Realization of Negative Capacitance with Topological Insulator Based MOS Capacitor1 HUI YUAN, GMU, KAI ZHANG, ODU, HAO ZHU, HAITAO LI, DIMITRIS IOANNOU, GMU, HELMUT BAUMGART, ODU, CURT RICHTER, NIST, QILIANG LI, GMU, ECE, GEORGE MASON UNIVERSITY TEAM, SEMICONDUCTOR AND DIMENSIONALMETROLOGY DIVISION OF NIST TEAM, ECE, OLD DOMINION ...

The double layer of electrode/electrolyte interfaces plays a fundamental role in determining the performance of solid state electrochemical cells. The double layer capacitance is one of the most-studied descriptors of the double layer. This work examines a case study on lanthanum strontium vanadate (LSV)/yttria-stabilized zirconia (YSZ) interfaces exposed in solid oxide fuel cell anode environm...

scanning impedance microscopy (sim) is one of the novel scanning probe microscopy (spm) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (c–v) behavior of the interface and ac transport properties. the sim is an ordinary afm equip...

The electrostatic problem of a hollow, conducting tube of finite length held at a fixed potential is solved using two methods. A twoterm Galerkin solution is constructed for the surface distribution of induced charge. The sum of a uniform component and a simple edgecondition term provides a variational solution to the dual integral equations that are the equations-of-motion for the mixed bounda...

Electrical Capacitance Tomography is a non intruding technique used in industries. It is based on measuring the capacitance of multi-electrode ECT sensor produced by the change in dielectricity or due to change in concentration of material. With the use of computed values, a cross sectional image of the material placed in the dielectric medium is obtained. ECT system can be used in chemical fie...