Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...

Breakdown is one of main failure mechanisms that limit write endurance ferroelectric devices using hafnium oxide-based materials. In this study, we investigate the gate current and breakdown characteristics Hf0.5Zr0.5O2/Si field-effect transistors (FeFETs) by carrier separation measurements to analyze electron hole leakage currents during time-dependent dielectric (TDDB) tests. Rapidly increasi...

Kaolin is a clay mineral that has found its huge use in electrical insulation. In power industries, mullite insulators plays vital role during electric transmission. The transformation of kaolin to via sintering method was carried out by varying the temperature heating at interval from . mass observed have changed until complete took place 11500C. dielectric strength (breakdown voltage) analyse...

Dielectrics are essential components in modern electronics and electric systems. When a sufficiently high voltage is applied on a layer of a dielectric, the dielectric will breakdown electrically. The breakdown limits the electrical energy density of the dielectric. We show that constraining the deformation of soft dielectrics can greatly enhance their breakdown electric fields and thus increas...

MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 volts and is capable of switching ...