In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-oninsulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SO...

In order to explore the feasibility of large-scale subthreshold logic circuits and to clarify the lower limit of supply voltage (VDD) for logic circuits, the dependence of the minimum operating voltage (VDD min) of CMOS logic gates on the number of stages, gate types and gate width is systematically measured with 90 nm CMOS ring oscillators (RO’s). The measured average VDD min of inverter RO’s ...

Abstract. Organic diodes and solar cells are constructed by placing together two organic semiconducting materials with dissimilar electron affinities and ionisation potentials. The electrical behaviour of such devices has been successfully modeled numerically using conventional drift diffusion together with recombination (which is usually assumed to be bimolecular) and thermal generation. Here ...

Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunnelin...

Recent experiments have shown that the current-voltage characteristics (I-V) of BPDN-DT (bipyridyl-dinitro oligophenylene-ethynylene dithiol) can be switched in a very controlled manner between "on" and "off" traces by applying a pulse in a bias voltage, V(bias). Here, the polaron formation energies are calculated to check a frequently held belief, namely, that the polaron formation can explain...

Thermoelectric effects in magnetic tunnel junctions are promising to serve as the basis for logic devices or memories in a "green" information technology. However, up to now the readout contrast achieved with Seebeck effects was magnitudes smaller compared to the well-established tunnel magnetoresistance effect. Here, we resolve this problem by demonstrating that the tunnel magneto-Seebeck effe...