Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

Abstract In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability to control off-state leakage current due to quantum tunneling and thermionic emission between the source and drain as well as band-to-band tunneling between the body and drain. Lateral S/D...

We have engineered the band gap profile of transmon qubits by combining oxygen-doped Al for tunnel junction electrodes and clean Al as quasiparticle traps to investigate energy relaxation due to quasiparticle tunneling. The relaxation time T1 of the qubits is shown to be insensitive to this band gap engineering. Operating at relatively low-E(J)/E(C) makes the transmon transition frequency disti...

The quantum dynamics of electrons in bulk states is investigated by scanning tunneling microscopy and spectroscopy on a Ag(100) surface. By measuring conductance maps above a threshold voltage, we observe standing waves at step edges and defects. We interpret these to originate from electrons in a bulk band edge at the point. From the spatially decaying waves, the wave vector and the quantum co...

Oxidized Ga-polar GaN surfaces have been studied both experimentally and theoretically. For in-situ oxidization at 550°C using molecular oxygen, Auger electron spectroscopy indicates a saturation oxygen coverage of 2.1 ± 0.5 monolayers. For these surfaces scanning tunneling microscopy reveals two surface phases, one with ° − × 30 3 3 3 3 R periodicity and the other with disordered 2× periodicit...

We consider propagation of coupled waves (polaritons) formed by a scalar electromagnetic wave and excitations of a finite one dimensional chain of dipoles. It is shown that a microscopic defect (an impurity dipole) embedded in the chain causes resonance tunneling of the electromagnetic wave with the frequency within the forbidden band between two polariton branches. We demonstrate that resonanc...

Bias dependent scanning tunneling microscopy and scanning tunneling spectroscopy have been used to characterize the influence of transverse electric fields on the electronic properties of boron-nitride nanotubes (BNNTs). We find experimental evidence for the theoretically predicted giant Stark effect. The observed giant Stark effect significantly reduces the band gap of BNNTs and thus greatly e...

The properties of InAs (110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high-magnetic field demonstrate Landau ...