نتایج جستجو برای: band edge engineering energy levels qd laser quantum dot size strain pacs numbers 7363kv

تعداد نتایج: 3126311  

2005
Chia-Jean Wang

In order to construct ultra-high density photonic integrated circuits, innovative techniques are required to circumvent the fundamental restriction set by Heisenberg’s Uncertainty Principle and the resulting diffraction limit. Traditionally, waveguides adhere to a lower bound in size roughly equal to the propagating wavelength to allow for energy confinement and minimal crosstalk. However, prog...

Journal: :ACS applied materials & interfaces 2016
Yeh-Hsing Lao Chun-Wei Chi Sarah M Friedrich Konan Peck Tza-Huei Wang Kam W Leong Lin-Chi Chen

A unique interaction between the cyanine dye and negatively charged quantum dot is used to construct a signal-on biaptameric quantum dot (QD) Förster resonance energy transfer (FRET) beacon for protein detection and distinct aptamer characterization. The beacon comprises a pair of aptamers, one intercalated with the cyanine dye (YOYO-3) and the other conjugated to a negatively charged, carboxyl...

2011
Marco Peres Sérgio Magalhães Vincent Fellmann Bruno Daudin Armando José Neves Eduardo Alves Katharina Lorenz Teresa Monteiro

Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observation of GaN QD excitonic recombination above and below the bulk GaN bandgap. In Eu-implanted SL s...

Journal: :ACS nano 2011
Minsheng Wang Emil B Song Sejoon Lee Jianshi Tang Murong Lang Caifu Zeng Guangyu Xu Yi Zhou Kang L Wang

Bilayer graphene has recently earned great attention for its unique electronic properties and commendable use in electronic applications. Here, we report the observation of quantum dot (QD) behaviors in bilayer graphene nanoribbons (BL-GNRs). The periodic Coulomb oscillations indicate the formation of a single quantum dot within the BL-GNR because of the broad distribution function of the carri...

Journal: :Optics express 2007
Hua Zhang L Andrea Dunbar Giacomo Scalari Romuald Houdré Jérôme Faist

We combine photonic crystal and quantum cascade band engineering to create an in-plane laser at terahertz frequency. We demonstrate that such photonic crystal lasers strongly improve the performances of terahertz quantum cascade material in terms of threshold current, waveguide losses, emission mode selection, tunability and maximum operation temperature. The laser operates in a slow-light regi...

Journal: :international journal of nano dimension 0
h. rasooli s. department of electrical engineering, college of technical& engineering, tabriz branch , islamic azad university, tabriz , iran. s. zabihi department of electrical engineering, college of technical& engineering, tabriz branch , islamic azad university, tabriz , iran. s. k. seyyedi s. department of electrical engineering, college of technical& engineering, tabriz branch , islamic azad university, tabriz , iran.

the electronic conductance at zero temperature through a quantum wire with side-connected asymmetric quantum ring (as a scatter system) is theoretically studied using the non-interacting hamiltonian anderson tunneling method. in this paper we concentrate on the configuration of the quantum dot rings. we show that the asymmetric structure of qd-scatter system strongly influences the amplitude an...

2012
Gavin Conibeer Ivan Perez-Wurfl Xiaojing Hao Dawei Di Dong Lin

The concept of third-generation photovoltaics is to significantly increase device efficiencies whilst still using thin-film processes and abundant non-toxic materials. A strong potential approach is to fabricate tandem cells using thin-film deposition that can optimise collection of energy in a series of cells with decreasing band gap stacked on top of each other. Quantum dot materials, in whic...

2017
Per Erik Vullum Magnus Nord Maryam Vatanparast Sedsel Fretheim Thomassen Chris Boothroyd Randi Holmestad Bjørn-Ove Fimland Turid Worren Reenaas

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Fi...

2008
I. Hapke - Wurst U. Zeitler H. Frahm A. G. M. Jansen R. J. Haug K. Pierz

Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a fieldinduced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the q...

2009
S. J. Boyle A. J. Ramsay A. P. Heberle

We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and o...

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