Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on e...

The influence of the aluminum nitride (AlN) film texture on the chemical etching in KOH solution was invested. The AlN films with the different texture and crystal quality were prepared by sputtering. It is found that the chemical etching behaviors, including the etch rate, the activation energy, the surface morphology and the anisotropy, are strongly dependent on the film texture. There is a f...

for a fiber optical surface plasmon resonance (spr) sensor a short part of its cladding should be removed to coat a thin layer of a metal. usually this is problematic when an optical fiber with small core diameter is used. in this paper, a new method using µliter droplet of the hf acid for short fiber optical taper fabrication is reported. using this method in a multi-mode optical fiber with th...

In this treatment method laser radiation, which is guided from a co-axially expanding liquid jet-stream, locally initiates on a metal surface a thermochemical etching reaction, which leads to selective material removal. Time-resolved measurements of the electrical potential were correlated with the specific processing parameters to identify conditions for stable and enhanced chemical etching re...

In this paper, we present result on the development of a simulation tool for the three-dimensional anisotropic wet chemical etching of bulk silicon etching or bulk micromaching. As a test of our simulation tool, we present several simulation results. Several simulation results demonstrate our simulation tool which is quite efficient for the design and development of MEMS device structure. The d...