Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS₂ by in...

A Cu-catalyzed benzannulation reaction transforms ortho(arylene ethynylene) oligomers into ortho-arylenes. This approach circumvents iterative Suzuki cross-coupling reactions previously used to assemble hindered ortho-arylene backbones. These derivatives form helical folded structures in the solid-state and in solution, as demonstrated by X-ray crystallography and solution-state NMR analysis. D...

The solar photosphere is a partially ionized medium with collisions between electrons, various metallic ions and neutral hydrogen playing an important role in the momentum and energy transport in the medium. Furthermore, the number of neutral hydrogen atom could be as large as 10 times the number of plasma particles in the lower photosphere. The non-ideal MHD effects, namely Ohm, Ambipolar and ...

We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm(2) V(-1) s(-1) at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ≈ 100 cm(2) V(-1) s(-1) at 180 K to ≈ 220 cm(2) V(-...

We examine the photophysical properties of ladder-type pentaphenylenes, which have been prepared as prototypical "all-in-one" emissive materials bearing both electron-accepting (diaryloxadiazole) and electron-donating (triphenylamine) units. We find that donor-acceptor interactions are very dependent on the nature of the connectivity of these groups to the main pentaphenylene chain. When the ox...

Conditions for the transfer printing of patterned carbon nanotube (CNT) films, along with a Au-gate, a poly methylmethacrylate (PMMA) dielectric layer and Au source-drain electrodes have been developed for the fabrication of thin-film transistors on a polyethylene terephthalate (PET) substrate. Chemical vapor deposition (CVD) grown CNTs were patterned using a photolithographic method. Transfer ...

The quality of intrinsic amorphous silicon films prepared by different deposition techniques was investigated. For very high frequency glow discharge, both the substrate temperature as well as the hydrogen dilution were varied. These layers were compared to hot wire material produced at comparable temperatures. To study the stability of these films, an optimised degradation method was developed...

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion de...