Gallium–nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and elded in applications ranging from pulsed radars and counter-IED jammers to CATV modules and fourth-generation infrastructure base-stations. GaN HEMT devices, exhibiting high power densities coupl...

AlGaN/GaN high electron mobility transistors (HEMTs) are favored for the use in high-power and highfrequency applications. Normally-off operation has been desired for various applications, but proved to be difficult to achieve. Recently, a new approach was proposed by Mizutani et al. [Mizutani T, Ito M, Kishimoto S, Nakamura F. AlGaN/GaN HEMTs with thin InGaN cap layer for normally-off operatio...

The monolithic integration of enhancementand depletion-mode (Eand D-mode) high electron mobility transistors (HEMTs) lattice-matched to InP is of interest in the area of circuits for low power, high speed communications. When compared to circuits implemented in depletion-mode @-mode) only technology, circuits implemented in ED-mode technology enjoy a number of advantages. D-mode only circuits r...

Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...

Abstract: The computer-controlled system for low-frequency noise measurements has been presented. All major functions for adequate polarisation of a device under test are programmable providing complete flexibility and automation for biasing. The inherent noise parameters of the main modules are enclosed. The system enables to measure input-output noise relations for BJTs, JFETs, MOSFETs, MESFE...

Gallium Nitride (GaN) devices are desirable for the application of high-power and high-speed operation electron devices because of their excellent properties such as large energy band gap and high saturated electron velocity. We have already developed and produced GaN HEMTs*1 on SiC substrate targeting the frequency range of L/S-band mainly for the amplifier used in cellular base stations. The ...

Development of transistors for advanced low-noise amplifiers requires better understanding mechanisms governing the charge carrier transport in correlation with noise performance. In this article, we report on study velocity InGaAs/InP high-electron-mobility (HEMTs) found via geometrical magnetoresistance wide range drain fields, up to 2 kV/cm, at a cryogenic temperature K. We observed, first t...

For millimeter-wave power applications, GaN high-electron mobility transistors (HEMTs) are often grown epitaxially on a high-purity semi-insulating c-axis 4H-SiC substrate. these anisotropic hexagonal materials, the design and modeling of microstrip coplanar interconnects require detailed knowledge both ordinary permittivity ε⊥ extraordinary εǁ perpendicular parallel, respectively, to c-axis. H...

Abstract Several devices based on 2D materials have become interesting for high-frequency
applications especially sensors, amplifiers and modulators of Terahertz frequencies.
Moreover, High Electron Mobility Transistors (HEMTs) emerged as important
competitors owing to the high quality resonances associated with plasma-wave
oscillations in channel. In this study,...

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, the physical mechanisms governing microwave figure therefore of practical interest. In particular, contribution thermal from gate at cryogenic temperatures remains unclear owing to a lack experimental measur...