نتایج جستجو برای: ag zno

تعداد نتایج: 62522  

2011
S. M. Prokes O. J. Glembocki R. W. Rendell M. G. Ancona

Surface-enhanced Raman spectroscopy !SERS" was performed on Ga2O3/Ag and ZnO/Ag nanowires, which were arranged in either a crossover or noncrossing geometry. Results indicate a high SERS sensitivity !near 0.2 pg" for nanowires arranged in a crossing geometry. It is suggested that this is due to the dielectric core/metal shell structure, as well as to the nanowire crossings, which are regions of...

Journal: :Nanoscale 2015
Zhongying Wang Xiaoshu Lv Yantao Chen Dan Liu Xinhua Xu G Tayhas R Palmore Robert H Hurt

Nanoreactors are material structures that provide engineered internal cavities that create unique confined nanoscale environments for chemical reactions. Crumpled graphene nanoparticles or "nanosacks" may serve as nanoreactors when filled with reactive or catalytic particles and engineered for a specific chemical function. This article explores the behavior of crumpled graphene nanoreactors con...

Journal: :Journal of Physics: Conference Series 2011

Journal: :physica status solidi (RRL) – Rapid Research Letters 2017

Journal: :International Journal of Modern Physics: Conference Series 2012

Journal: :Catalysts 2023

Zinc oxide and titanium dioxide semiconductor photocatalysts have been widely utilized in the last few decades for water treatment because of their high photocatalytic efficiency. Recently, a lot researchers focused on improvement properties catalysts through modifying co-modifying them with different metals nonmetals. These co-catalytic ions improve activity ZnO TiO2 by reducing its energy ban...

Journal: :Journal Of Natural Sciences And Mathematics Research 2017

2012
Sang-Hun Nam Sang-Jin Cho Jin-Hyo Boo

Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due to a dopant that accepts a carrier. The metal-doped ZnO (M = Li, Ag) films were prepared by radi...

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