In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (10(15) cm(-3)) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The i...

We simulate the formation of experimentally observed trapezoidal hillocks on etched Si(110) surfaces, describing their generic geometrical shape and analyzing the relative stability and/or reactivity of the key surface sites. In our model, the hillocks are stabilized by Cu impurities in the etchant adsorbing on the surface and acting as pinning agents. A model of random adsorptions will not res...

Growth of ordered organic films of 3, 4, 9, 10-perylene-tetracarboxylic-dianhydride (PTCDA), on inorganic substrates of GaAs(001) is investigated by means of low-energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The passivation of the sample can be achieved by exposing the substrate to sulphur (the SnS2 compound) or wet-chemical etching using an S-containi...

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were in...

This paper focuses on finding optimal electrochemical conditions from linear sweep voltammetry analysis for preparing highly reproducible tip-enhanced Raman scattering (TERS) conical gold tips with dc-pulsed voltage etching. Special attention is given to the reproducibility of tip apex shapes with different etchant mixtures. We show that the fractional Brownian motion model enables a mathematic...

This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 m 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) ...

In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 〈110〉 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after ...