نتایج جستجو برای: ویسکر aln

تعداد نتایج: 3353  

2005
S Saravanan E G Keim G J M Krijnen M Elwenspoek

ABSTRACT: This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the ...

Journal: :Journal of bone and mineral research : the official journal of the American Society for Bone and Mineral Research 2009
Thomas E Uveges Kenneth M Kozloff Jennifer M Ty Felicia Ledgard Cathleen L Raggio Gloria Gronowicz Steven A Goldstein Joan C Marini

Long courses of bisphosphonates are widely administered to children with osteogenesis imperfecta (OI), although bisphosphonates do not block mutant collagen secretion and may affect bone matrix composition or structure. The Brtl mouse has a glycine substitution in col1a1 and is ideal for modeling the effects of bisphosphonate in classical OI. We treated Brtl and wildtype mice with alendronate (...

Journal: :The British journal of surgery 2014
H Kawada N Kurita F Nakamura J Kawamura S Hasegawa K Kotake K Sugihara S Fukuhara Y Sakai

BACKGROUND The node classification outlined in the seventh edition of the TNM classification is based solely on the number of metastasized lymph nodes. This study examined the prognostic value of apical lymph node (ALN) metastasis and the additional value of incorporating ALN status into a risk model based on the seventh edition. METHODS This was a cohort study of patients with stage III colo...

Journal: :Bone 2001
P Roschger S Rinnerthaler J Yates G A Rodan P Fratzl K Klaushofer

The strength of bone is correlated with bone mass but is also influenced significantly by other factors such as structural properties of the matrix (e.g., collagen mutations) and the mineral. Changes at all levels of this organization could contribute to fracture risk. We investigated the effects of alendronate (Aln) treatment on the density of mineralization and the ultrastructure of the miner...

Journal: :Journal of musculoskeletal & neuronal interactions 2007
O Bock H Boerst F E Thomasius C Degner M Stephan-Oelkers S M Valentine D Felsenberg

OBJECTIVE To examine in a major cohort of patients whether or not musculoskeletal adverse effects (MAEs), similar to those seen in intravenous bisphosphonates (BP), might occur also in high dosage oral treatment regimens with alendronate (ALN) and risedronate (RSN). PATIENTS AND METHODS 612 consecutive patients treated in the osteoporosis outpatient clinic at Charite, Campus Benjamin Franklin...

Journal: :Nihon Ronen Igakkai zasshi. Japanese journal of geriatrics 2006
Masataka Shiraki

Recent progress in osteoporosis treatment has realized prevention of osteoporotic fractures. However, there is no guideline regarding which agent should be used in an individual patient. In this report, we investigated the effectiveness of several drugs for osteoporosis in a head-to-head comparative study. A total of 776 osteoporotic patients were treated with alendronate (ALN, n=197), etidrona...

2013
Masaaki Ryomoto Masataka Mitsuno Hiroe Tanaka Shinya Fukui

A 40-year-old man underwent emergent pulmonary artery thromboembolectomy for pulmonary artery thromboembolism, and an ALN filter was placed in the inferior vena cava immediately after the operation. He had sudden ventricular tachycardia with dyspnea on postoperative day 6. An emergent operation was successfully performed, and the ALN filter was observed at the tricuspid valve with a large amoun...

2013
Yu Cao Kejia Wang

A study of the transport properties of polarizationinduced 2DEGs at MBE-grown single AlN/GaN heterostructures with different growth rates is reported. It is observed that faster growth rates lead to high mobilities, approaching ∼ 1600 cm2/Vs at 300 K and ∼ 6000 cm2/Vs at low temperatures for ultrathin ( 2.3 nm AlN/GaN) heterojunctions. By using a theoretical model in conjunction with experiment...

Journal: :Microelectronics Journal 2008
Weijun Luo Xiaoliang Wang Lunchun Guo Hongling Xiao Cuimei Wang Junxue Ran Jianping Li Jinmin Li

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of th...

2010
Thorsten Schupp Georg Rossbach Pascal Schley Rüdiger Goldhahn Marcus Röppischer Donat Josef As

We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C-SiC (001) substrate. For high-quality c-AlN layers reflection high-electron energy diffraction (RHEED) patterns in all azimuths show RHEED patterns of the cubic lattice, hexagonal reflections are absent. Highresolution X-ray diffraction (HRXRD) measuremen...

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