Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack.

An unforeseen phenomenon occurred when measuring the current–voltage (I–U) characteristics of graphene samples in pulsed regime. The monolayer was grown by chemical vapor deposition and transferred onto 50 nm buffer HfO2 AlO3 layers. Bilayer obtained from epitaxial on SiC 100 SiO2. distance between contacts varied 5 to 25 µm. measurements were performed employing cables Ω impedance transmit pul...

Memristive devices are under intense development as non-volatile memory elements for extending the computing capabilities of traditional silicon technology by enabling novel primitives. In this respect, interface-based memristive promising candidates to emulate synaptic functionalities in neuromorphic circuits aiming replicate information processing nervous systems. A device composed Nb/NbOx/Al...

We have performed density functional calculations of oxygen incorporation and diffusion in monoclinic hafnia (HfO2) for a range of oxygen charge states. The calculations demonstrate that oxygen favors atomic incorporation and that O2- is the most stable species. We find that oxygen interstitials diffuse via exchange with lattice oxygen sites in hafnia, and that O- species have the smallest diff...