Recently, a number of coding techniques have been reported to achieve near toll quality synthesized speech at bit-rates around 4 kb/s. These include variants of Code Excited Linear Prediction (CELP), Sinusoidal Transform Coding (STC) and Multi-Band Excitation (MBE). While CELP has been an effective technique for bit-rates above 6 kb/s, STC, MBE, Waveform Interpolation (WI) and Mixed Excitation ...

We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electro...

We report the first photoluminescence (PL) characterization of InAs nanowires (NWs). The InAs NWs were grown on GaAs(111) B and Si(111) substrates using the Au-assisted molecular beam epitaxy (MBE) growth technique or metal-organic chemical vapor deposition (MOCVD). We compared the PL response of four samples grown under different conditions using MBE or MOCVD. High-resolution transmission elec...

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. ...

We report large scale Monte Carlo simulations of the equilibrium discrete Laplacian roughening (dLr) model, originally introduced as the simplest one accommodating the hexatic phase in two-dimensional melting. The dLr model is also relevant to surface roughening in molecular beam epitaxy (MBE). Our data suggest a single phase transition, possibly of the Kosterlitz-Thouless type, between a flat ...

As Model-Based Engineering (MBE) starts to be effectively used, some of its constituent disciplines such as Domain Specific Modeling and Metamodeling are becoming quite popular. Metamodels play a cornerstone role in these approaches, not only for defining Domain Specific Languages but also for specifying all kinds of artifacts involved in MBE. However, there is a lack of appropriate quality mod...

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the ...

3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine s...

A seemingly simple oxide with a rutile structure, RuO2, has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity strong catalytic activity. Much interest arisen surrounding the controlled synthesis of RuO2 films, but unfortunately, utilizing atomically deposition techniques, such as molecular beam epitaxy (MBE), difficult due ultra-low vapor press...