نتایج جستجو برای: زیرلایه soi
تعداد نتایج: 5227 فیلتر نتایج به سال:
Application of the VT-control method is studied in ultrathin double-gate (DG) SOI inverter, as the simplest building block of SOI logic circuits. Two control voltages, VCN and VCP, are applied to the back-gates of the n-type and p-type transistors, respectively, to reduce the leakage current when the inverter is in the idle mode. Simulations with DESSIS disclose that both control voltages may b...
MOS Technology on massive substrate played a critical task during micro-electronic evolution. The regular reduction of transistors sizes leads today to nanometric devices. With this reduction, some parasitic physical effects, previously with no importance, became mostly amplified, leading to the end of MOSFETs technology on massive substrate. SOI technology gives a good alternative to that mini...
This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency (reaching cutoff frequencies close to 500 GHz for n-MOSFETs) and for harsh environments (high temperature, radiation) commercial applications. For RF and system-onchip applications, SOI also presents the major advantage of providing high resistivity substrate capabilities, leadin...
This study presents optimal placement of voltage sag monitors based on new Sag Occurrence Index (SOI) which ensures observability even in case of monitor failure or line outages. Multiple solutions for optimal placement of voltage sag monitors for voltage sag detection have been obtained by genetic algorithm approach such that observability of the whole system is guaranteed. A new Sag Occurrenc...
Low temperature mobility measurements of silicon-on-insulator ~SOI! metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m/V s. The ultrathin devices show mobility degr...
In this paper, a space-time RAKE (ST-RAKE) receiver with enhanced interference rejection is proposed for CDMA communications systems over a multipath fading channel. The proposed scheme involves three stages. An interference-blocking (IB) transformation is first developed based on the received data (undespread data) for suppressing the strong interference. Optimum beamforming is then performed ...
A 64 x 128 real-time infrared (RTIR) complementary metaloxide semiconductor (CMOS)/ silicon-on-insulator (SOI) scene generation integrated circuit (IC) is described. The RTIR IC offers real-time dynamic thermal scene generation. This system is a mixed-mode design, with analog scene information written and stored into a thermal pixel array. The design uses micro-electromechanical sensors (MEMS) ...
By quantum Monte Carlo simulation of a realistic multiorbital Anderson impurity model, we study the spin-orbit interaction (SOI) of an Fe impurity in Au host metal. We show, for the first time, that the SOI is strongly renormalized by the quantum spin fluctuation. Based on this mechanism, we can explain why the gigantic spin Hall effect in Au with Fe impurities was observed in recent experiment...
Segmental omental infarction (SOI) is a rare cause of acute abdominal pain. Depending on the site of infarction, it mimics conditions like appendicitis, cholecystitis, and diverticulitis. Before the widespread use of Computed Tomography (CT), the diagnosis was usually made intraoperatively. SOI produces characteristic radiological appearances on CT scan; hence, correct diagnosis using this form...
In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented. r 2007 Elsevier B.V. All rights reserved. PACS: 07....
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