In this paper, hybrid modulation methods suitable for H-bridge MLI are discussed. The results of experimental work using dSPACE system only are presented for three phase five level cascaded type inverter. Different hybrid carrier PWM (Pulse Width Modulation) strategies using sinusoidal reference, third harmonic injection reference, 60 degree reference and stepped wave reference for the chosen i...

Articles you may be interested in Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Trap evaluations of metal/oxide/sil...

In the past few years gas insulated high voltage circuit breakers have improved considerably, in particular with respect to required drive energy for operation, compactness and reliability. A further reduction in size implies increasing operational field stress inside the breaker and, thus, a reduction in built-in safety margins. If the design comes closer to its physical limits, in particular ...

This paper presents a new design of zero-voltage-switching (ZVS) buck converter. This new converter utilizes a coupled inductor to implement the output filter inductor as well as the auxiliary inductor which is commonly employed to realize ZVS for switches. Additional magnetic core for the auxiliary inductor in traditional designs is removed and hence manufacture cost is reduced. Moreover, than...

We fabricated coplanar homojunction a-IGZO TFTs that are highly stable under AC and DC bias-temperature-stress. For TFTs of the size W/L = 60μm/10μm, the stress-induced threshold voltage shifts are all within -0.35 V. A comprehensive investigation of AC BTS stress polarity, pulse width, and duty cycle dependence is presented. We find that higher frequency of bipolar AC pulses increases the devi...

We performed gate ramp voltage stress on III-V InGaAs based MOSFETs. Stress induces trapped charge and it also leads to interface trap generation, which has detrimental effects on the subthreshold slope and on the transconductance. At high electric fields, before the hard breakdown, a very lowfrequency high-current random telegraph noise appears at the gate, which seems to be not correlated wit...

The ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions. A technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the otherwise-unknown relaxation component. The properties of relaxatio...

We present a micromachined, stress-induced, thermal bimorph actuator for optical purpose. Piston motions of more than 3um are demonstrated by FEM simulation. Upon the release from the substrate, the actuators lift off the substrate due to a large built-in bending moment arising from the compressive residual stress in the poly-silicon layer and tensile residual stress in the metal layer. Large d...

Low-voltage-activated calcium channels are reexpressed in ventricular myocytes in pathological conditions associated with hypoxic episodes, but a direct relation between oxidative stress and T-type channel function and regulation in cardiomyocytes has not been established. We aimed to investigate low-voltage-activated channel regulation under oxidative stress in neonatal rat ventricular myocyte...

A typical operating temperature of a solid oxide fuel cell (SOFC) is quite high above 750 °C and affects the thermomechanical behavior of the cell. Thermal stresses may cause microstructural instability and sub-critical cracking. Therefore, a joint analysis by the computational fluid dynamics (CFD) and computational structural mechanics based on the finite element method (FEM) was carried out t...