نتایج جستجو برای: vertical buffer
تعداد نتایج: 136620 فیلتر نتایج به سال:
Monolithic vertical cavity surface emitting lasers (VCSELs) on Si are demonstrated. The GaSb multi-quantum well active region embedded in an Al(Ga)Sb half-wave cavity spacer layer enables lasing under room-temperature optically-pumped conditions. The 13% lattice mismatch is accommodated by a spontaneously formed 2-D array of 90 misfit dislocations at the AlSb=Si interface. This growth mode prod...
For super-parallel video processing, we proposed a powerand area-efficient SRAM core architecture with a segmentation-free access, which means accessibility to arbitrary consecutive pixels, and horizontal/vertical access. To achieve these flexible accesses, a spirallyconnected local-wordline select signal and multi-selection scheme in wordlines are proposed, so that extra X-decoders in the conv...
We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius...
This paper applies plane parallel radiance transport techniques to scattering from vegetation. The leaves, stems, and branches are represented as a volume density of scattering surfaces, depending only on height and the vertical component of the surface normal. Ordinary differential equations are written for the multiply scattered radiance as a function of the height above the ground, with the ...
Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and s...
background: daylight availability data are essential for designing effectively day lighted buildings. in respect to no available daylight availability data in iran, illuminance data on the south facing vertical surfaces were estimated using a proper method. methods: an illuminance measuring set was designed for measuring vertical illuminances for standard times over 15 days at one hour interval...
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