Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing stable static in non-transient non-hysteretic regime remains a daunting task. The problem stems from lack understanding how origin NC due emergence domain state can be put use for implementing...

Magnetometers exploiting interference effect of the superconducting wavefunction are known since realization first SQUID, with several improvements in performance following years. In this field, Superconducting Quantum Interference Proximity Transistor (SQUIPT) offers an interesting alternative to conventional SQUID thanks its lower power dissipation that makes it ideal for nanoscale and ultra-...

In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is and investigated. The impact of thickness the source region lateral tunneling length between oxide edge on analog radio frequency parameters are investigated with appropriate drain through 2D-TCAD tool. slender shape enhanced electric crowding at corners which reflect in terms high ON-curr...