Defects are inevitably present in graphene and can alter its properties and thus its applications. Interestingly, we find that commonly observed Stone-Wales and double vacancy defects do not affect graphene's hydrophilic and hydrophobic properties and that an adsorbed single water layer does not noticeably affect the defect-containing graphene's electronic properties. Our findings are based on ...

We study the Coulomb drag between two single graphene sheets in intrinsic and extrinsic graphene systems with no interlayer tunneling. The general expression for the nonlinear susceptibility appropriate for single-layer graphene systems is derived using the diagrammatic perturbation theory, and the corresponding exact zerotemperature expression is obtained analytically. We find that, despite th...

We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers ...

Graphitization of SiC, is attracting particular research interest since it is a very promising way to produce uniform graphene films over large areas. Graphene is a planar one-atom-thick layer of sp2bonded carbon atoms with remarkable electronic transport properties that make it a potential candidate for future electronic applications. However, graphene presents specific structural and electron...

Few-layer graphene ultrathin films were synthesized via solid-state carbon diffusion from amorphous carbon (a-C) thin layers sputtering coated on Si substrates with or without a SiO(2) layer, which an a-C layer was covered by a nickel (Ni) layer as a catalyst. When the Ni/a-C bilayer coated samples were heated at 1000°C the carbon (C) atoms from the a-C layers diffused into the top Ni layers to...

Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN an...

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplo...

The extensive oxygen-group functionality of single-layer graphene oxide proffers useful anchor sites for chemical functionalization in the controlled formation of graphene architecture and composites. However, the physicochemical environment of graphene oxide and its single-atom thickness facilitate its ability to undergo conformational changes due to responses to its environment, whether pH, s...

A functionalized graphene sheet-sulfur (FGSS) nanocomposite was synthesized as the cathode material for lithium-sulfur batteries. The structure has a layer of functionalized graphene sheets/stacks (FGS) and a layer of sulfur nanoparticles creating a three-dimensional sandwich-type architecture. This unique FGSS nanoscale layered composite has a high loading (70 wt%) of active material (S), a hi...

The Pb intercalation at the interface of monolayer graphene (MG) and Ru(0001) is studied by means of low temperature scanning tunneling microscopy (LT-STM) and Raman spectroscopy. Despite being covered by MG, the atomic structures of the Pb layer formed between MG and Ru(0001) have been directly imaged using LT-STM. The Pb layer intercalated underneath MG exhibits a √7 × √7-R19° superstructure ...