GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si ...

We investigated magnetic remanence states of epitaxially grown, exchange-biased MnPd/Fe bilayers by electron holography emphasizing the crystallographic orientations of the layers. Thin-foil transmission electron microscopy (TEM) specimens were carefully prepared along both hard and easy axes of the Fe layer. The ex situ magnetization-reversal process was carried out using the TEM specimens, an...

It is well known that magnetic exchange coupling across the ferromagnet–antiferromagnet interface results in an unidirectional magnetic anisotropy of the ferromagnetic layer, called exchange bias. Despite large experimental and theoretical efforts, the origin of exchange bias is still controversial, mainly because detection of the interfacial magnetic structure is difficult. We have applied pho...

The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that the effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of ≈15Å thickness. As a consequence, charge redistribution can be rule...

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of microand nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence ...

Atomic layer deposition (ALD) has been used in advanced applications where thin layers of materials with precise thickness down to the nanometer scale are needed. Using anodic oxidation, we prepared the porous alumina. Anodic oxidation was carried out in 5 C 0.3M oxalic acid with anodizing voltages (~ 40 V) and two step anodization method. SEM shows that, these porous anodic oxides are well ali...

the objective of this study was to investigate the drying kinetics of oyster mushroom, pleurotus ostreatus mushrooms were dried using a cabinet-type convective dryer. air temperatures of 50, 60 and 70 oc were used for the drying experiments. the experimental drying data were fitted to different theoretical models to predict the drying kinetics. nonlinear regression analysis was performed to rel...

In the knee joint, the purpose of the cartilage-bone interface is to maintain structural integrity of the osteochondral unit during walking, kneeling, pivoting, and jumping--during which tensile, compressive, and shear forces are transmitted from the viscoelastic articular cartilage layer to the much stiffer mineralized end of the long bone. Mature articular cartilage is integrated with subchon...

When a stably stratified density interface is embedded in a region of strong velocity shear, hydrodynamic instabilities result. Here we generalize the stratified shear layer to allow an offset between the centre of the shear layer and the density interface. By including this asymmetry, and keeping the density interface thin with respect to the shear layer, the asymmetric Holmboe (AH) instabilit...

Anomalous decrease in effective damping parameter αeff in sputtered Ni81Fe19 (Py) thin films in contact with a very thin β-Ta layer without necessitating the flow of DC-current is observed. This reduction in αeff, which is also referred to as anti-damping effect, is found to be critically dependent on the thickness of β-Ta layer; αeff being highest, i.e., 0.0093 ± 0.0003 for bare Ni81Fe19(18 nm...