High-power arc lamp design has enabled ultrahigh-temperature sUHTd annealing as an alternative to conventional rapid thermal processing sRTPd for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction...

Porous MnO/C nanotubes are synthesized by a facile hydrothermal method followed by thermal annealing, and possess excellent cyclability and high rate capability as an anode for lithium ion batteries.

Silole-containing organic materials have been known to exhibit altered properties with respect to their carbon analogues. Recently, different categories of silole-containing polymers have been reported to show promising characteristics as materials for thin-film transistors and polymer solar cells. Most of the previous studies on silole derivatives mainly focus on the molecular orbital shapes a...

Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the “metal-induced nanocrystalline mechanism”, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix a...

Composite films of P3HT/PCBM-(poly[3-2,5-diyl]/[6,6]-phenyl C61 butyric acid methyl ester) are widely used as an active layer in plastic solar cells. We have studied the influence of thermal annealing on nano-structural and optical properties of thin spin-coated P3HT/PCBMfilms. Their structural properties were studied by X-ray diffraction in grazing incidence geometry. It was found that the cry...

In this work, the flatband voltage shift of SiO2 embedded with silicon nanocrystal (nc-Si) annealed at different annealing temperature, different annealing time and under different temperature ramping rates are being investigated. The Si-ions are implanted into the SiO2 with very low energy. The instability of the flatband voltage shift is due to fact that there are remaining Si ions in the SiO...

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochr...

The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 1C with arsenic (As) and phosphorus (P) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 71. Compared with impurity-free induced intermixing, the intermixing degree is significantly ...

Immunoglobulins are important biomarkers to evaluate the immune status or development of infectious diseases. To provide timely clinical treatments, it is important to continuously monitor the level of multiple immunoglobulins. Localized surface plasmon resonance (LSPR)-based nanoplasmonic sensors have been demonstrated for multiplex immunoglobulins detection. However, the sensor fabrication pr...

Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly doped junctions. In this paper, we report some recent investigations focused on this annealing meth...