A brief analysis of methods and features measuring thermal parameters integrated microwave power amplifiers on bipolar transistors (BT) is presented. The hardware software complex implementing the method amplifier according to OST 11 0944-96 original modulation described. In both methods, temperature active region BT crystals determined by a change in certain temperature-sensitive parameter (TS...

The technological evolution of telecommunication networks in recent years has shown that the availability of transmission bandwidth has been growing at a faster pace than the STNitChing bandwidth inside network nodes [4]. This means that in the near future electronic switching will become the perfonnance bottleneck of high-capacity networks. The cost of a Switching device (be it an IP router, a...

Nowadays, the fiber spectrum is only partially exploited, i.e., mainly in C-band and more recently C + L-band, where attenuation profile experiences minimum. Thus, communications technology—amplifiers, switching, transceivers, etc.—and networking solutions are mature for those bands. However,...

Efficient RF power amplifiers used in third generation systems require linearization in order to reduce adjacent channel inter-modulation distortion, without sacrificing efficiency. Digital baseband predistortion is a highly cost-effective way to linearize power amplifiers (PAs). New communications services have created a demand for highly linear high power amplifiers (HPA's). Traveling Wave Tu...

Fujitsu has been developing gallium nitride high electron mobility transistors (GaNHEMT) for small transmitter amplifiers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in highly efficient transmitter amplifiers has attracted much attention because of its high breakdown voltage characteristics. High-efficiency amplifiers with high gain are needed to decrease the power consumpt...

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

transfer matrix method (tmm) has been applied to analyze characteristics of semiconductor laser optical amplifiers. the input signal is sinusoidal modulating wave and we do not assume the modulating bias signal as well. we have shown that the distoration arises from gain modulation at low modulation frequencies, but in microwave modulation frequencies, the gain takes an average value and the re...