We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojuncti...

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterizat...

Two in one--We show here that the highly strained trans,trans-diolefin (E,E)-1,5-cyclooctadiene can perform efficiently two different click reactions at fast reaction rates. It is capable of first undergoing [3+2] cycloadditions with 1,3-dipoles at a reaction rate comparable to that of strained cyclooctynes. The resulting cycloadduct can then perform a much faster inverse-electron-demand Diels-...

The density of states and the AC conductivity of graphene under uniform strain are calculated using a new Dirac Hamiltonian that takes into account the main three ingredients that change the electronic properties of strained graphene: the real displacement of the Fermi energy, the reciprocal lattice strain and the changes in the overlap of atomic orbitals. Our simple analytical expressions for ...

The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba S...

The in-plane transport properties of a strained ( 100) Si layer on a relaxed Sii -XGe, substrate are studied with an ensemble Monte Carlo technique. Similar velocity (-field) characteristics are found for strained Si with any valley splitting energy AE)O. 1 eV. These phonon-limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm’/v s at 77 K. There is only a slight increase in th...

The effect of gravity and thermal expansion on the propagation of a triple flame in a horizontal channel. Combustion and Flame Submitted (2013). [3] Al-Malki, F and Daou, J. Triple-flame propagation against a Poiseuille flow in a channel with porous walls. Submitted (2013). [4] Daou, J. Strained premixed flames: effect of heat-loss, preferential diffusion, and the reversibility of the chemical ...

A complete semi-analytical model is proposed for the simulation of the electronic, mechanical and piezoelectric properties of narrow gap strained semiconductor quantum nanostructures. A transverse isotropic approximation for the strain and a new axial approximation for the strained 8x8 Hamiltonian are proposed. It is applied extensively to the case of InAs/InP quantum dots (QD). Symmetry analys...

The electronic structure of strained and unstrained Gd(0001) has been studied with spin-polarized photoemission spectroscopy and spin-polarized inverse photoemission spectroscopy. In this work, we observed that relaxation of the expansively strained in-plane crystal lattice constant, of Gd(0001) on Mo(112), significantly diminishes the differences in the electronic structure from that observed ...