نتایج جستجو برای: single electron device

تعداد نتایج: 1718195  

2002
Jian Huang F. Pierre Tero T. Heikkilä Frank K. Wilhelm Norman O. Birge

Recently Baselmans et al. @Nature, ~London! 397, 43 ~1999!# showed that the direction of the supercurrent in a superconductor/normal/superconductor Josephson junction can be reversed by applying, perpendicularly to the supercurrent, a sufficiently large control current between two normal reservoirs. The unusual behavior of their 4-terminal device ~called a controllable p junction! arises from t...

Journal: :journal of dental school, shahid beheshti university of medical sciences 0
سعید رئوفی saeed raoofi dental school, shiraz university of medical sciences, shiraz-iranدانشکده دندانپزشکی، دانشگاه علوم پزشکی شیراز. مهرنوش سبزقبائی mehrnoosh sabzeghabaie dental school, shiraz university of medical sciences, shiraz-iranدانشکده دندانپزشکی، دانشگاه علوم پزشکی شیراز. رضا عمید reza amid dental school, shahid beheshti university of medical sciences, tehran-iranدانشکده دندانپزشکی، دانشگاه علوم پزشکی شهید بهشتی.

objective: peri-implantitis is an irreversible inflammatory reaction in the soft and hard tissues around a functional implant . one of the treatment approaches of this disease include smoothing and polishing the rough surface and removing threads on the implants using rotary instruments, which is called implantoplasy. clinicians should perform implantoplasty with caution because it may raise th...

Journal: :Physical Review Materials 2022

Layered van der Waals (vdW) magnetic materials have attracted widespread attention as new platforms for understanding and controlling magnetism in the two-dimensional limit spintronic devices. In contrast to $3d$-electron vdW magnets, very few f-electron magnets been studied. Here, authors report physical properties of Ce${}_{2}$Te${}_{5}$ single crystals, a layered $4f$-electron magnet. Four c...

2011
Daniel Moraru Arief Udhiarto Miftahul Anwar Roland Nowak Ryszard Jablonski Earfan Hamid Juli Cha Tarido Takeshi Mizuno Michiharu Tabe

Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as...

Journal: :Applied Microbiology 1975

2004
E. Räsänen J. Könemann R. J. Haug M. J. Puska R. M. Nieminen

We have studied the single-electron transport spectrum of a quantum dot in GaAs/AlGaAs resonant tunneling device. The measured spectrum has irregularities indicating a broken circular symmetry. We model the system with an external potential consisting of a parabolic confinement and a negatively charged Coulombic impurity placed in the vicinity of the quantum dot. The model leads to a good agree...

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2009
N de Jonge D B Peckys G J Kremers D W Piston

Single gold-tagged epidermal growth factor (EGF) molecules bound to cellular EGF receptors of fixed fibroblast cells were imaged in liquid with a scanning transmission electron microscope (STEM). The cells were placed in buffer solution in a microfluidic device with electron transparent windows inside the vacuum of the electron microscope. A spatial resolution of 4 nm and a pixel dwell time of ...

سعداله ابراهیمی, , مهدی اسماعیل‌زاده, ,

  A detailed analysis of electron trajectories in a realizable helical wiggler free electron laser with ion channel guiding using electron (single particle dynamics) is presented. Conditions for stability of electron orbit have been investigated, calculations are made to illustrate. Conclusion shows that there are differences stable (unstable) condition(s) electron trajectories between ideal he...

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