Third-order add-drop filters based on series-coupled microring resonators were fabricated in silicon-rich silicon nitride with accurate dimensional control and negligible sidewall roughness. For the first time, a low 3 dB drop loss is demonstrated with a wide 24 nm free-spectral-range in a high-order microring filter without using the Vernier effect. The spectral response is matched by rigorous...

The influence of relativistic effects on properties and volatility of the group-8 tetroxides MO4, where M=Ru, Os, and element 108, Hs, was studied on the basis of results of the fully relativistic (four component) and nonrelativistic density functional theory calculations. Relativistic effects were shown to increase bond strengths and decrease bond lengths in these molecules. They are responsib...

We successfully use the corners of a common silicon nitride supporting window in lensless X-ray microscopy as extended references in differential holography to obtain a real space hologram of the illuminated object. Moreover, we combine this method with the iterative phasing techniques of coherent diffraction imaging to enhance the spatial resolution on the reconstructed object, and overcome th...

This paper presents work aimed at optimizing the fabrication of silicon nitride Si(x)N(y) thin-film visible-light planar waveguides using plasma-enhanced chemical vapour deposition (PECVD). The effects of plasma frequency, precursor gas ratio, and thermal annealing in relation to waveguide optical properties (refractive index, propagation losses) are studied. Experimental results over a wide ra...

Multiple heaters in photonic integrated circuits must be controlled accurately to achieve reliable performance of the thermooptic system. In this paper, we show wavelength stabilization using a system with unique design for silicon nitride circuits. Keywords; Thermooptic, dynamic, control, feedback

The effect of a thermally grown silicon nitride (SiNx) film on end-of-range extrinsic dislocation loops in a silicon substrate was investigated by transmission electron microscopy. A layer of extrinsic dislocation loops was formed by annealing a Si wafer amorphized by a Ge ion implant. A nitride film was grown on the Si by further annealing in ammonia (NH3) at 810 and 910 °C for 30–180 min. Waf...

Scanning rates of the atomic force microscope (AFM) could be significantly increased by integrating the force sensing probe with microelectromechanical systems (MEMS). We present a micromachining method for batch fabrication of in-plane AFM probes that consist of an ultra-sharp silicon nitride tip on a single crystal silicon cantilever. Our fabrication method is fully compatible with the silico...

We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account fo...

Solid-state nanopores are capable of the label-free analysis of single molecules. It is possible to add biochemical selectivity by anchoring a molecular receptor inside the nanopore, but it is difficult to maintain single-molecule sensitivity in these modified nanopores. Here, we show that metallized silicon nitride nanopores chemically modified with nitrilotriacetic acid receptors can be used ...