The ability of the atomic force microscope ~AFM! to realize lithography patterns on silicon surfaces is widely known and leads to the formation of silicon nanostructures after an etching step. In this article, we aim at improving the fabrication process to yield silicon nanowires with minimum lateral dimensions for the realization of Coulomb blockade based devices. First, we focus on the AFM li...

This work proposes a new approach to characterize the mechanical properties of nanowires based on combination nanomechanical measurements and models. Silicon with critical dimension 90 nm length 8 ?m obtained through monolithic process are characterized in-situ three-point bending tests. A nonlinear model is developed evaluate behavior nanowires. In this model, intrinsic stress surface paramete...

Plasmon resonances (PRs) in metallic nanostructures have been extensively studied, whereas reports on PR silicon nanowires (Si NWs) are very few, partial, and they refer to structures larger than 100 nm. Discrete Si NWs with core sizes as small 30 nm at high resolution observed. They attributed plasmonic identifying two groups, the traveling waves, exhibiting discrete modes along NW length for ...