A Pall Maxi-Gaskleen purifier of the Pall AresKleen family of gas purification products was evaluated for its efficacy in reducing oxygen impurities in a silicon germanium (SiGe) deposition process for a strained silicon application at a major IDM in the US. Impact on process parameters such as hydrogen pre-bake temperature and interfacial/within-film oxygen concentration were studied as a func...

Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study...

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to al...

An approach for the preparation of an oxidized porous silicon microparticle drug delivery system that can provide efficient trapping and sustained release of various drugs is reported. The method uses the contraction of porous silicon's mesopores, which occurs during oxidation of the silicon matrix, to increase the loading and retention of drugs within the particles. First, a porous Si (pSi) fi...

Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a –2 goniometer. A silicon wafer was analyzed as the reference substrate mater...

Single particle tracking with a wide field microscope is used to study the solid liquid interface between the viscous liquid tetrakis(2-ethylhexoxy)-silane and a silicon dioxide surface. Silicon dioxide nanoparticles (5 nm diameter) marked with the fluorescent dye rhodamine 6G are used as probes. The distributions of diffusion coefficients, obtained by mean squared displacements, reveal heterog...

In this chapter, we discuss a method of metallic bonding between two deposited silver layers. A diffusion bonding method has been developed that enables layer transfer of single crystal lithium niobate thin films onto silicon substrates. A silver film was deposited onto both the silicon and lithium niobate surfaces prior to bonding, and upon heating, a diffusion bond was formed. Transmission el...

N type as well P type top gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200°C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs) doped μc-films deposited by HW-CVD. The gate insulator is a...

Microscale Laser Shock Peening (LSP), also known as Laser Shock Processing, is a technique that can be potentially applied to manipulate residual stress distributions in metal film structures and thus improve the fatigue performances of micro-devices made of such films. In this study, microscale LSP of copper films on single crystal silicon substrate is investigated. Before and after-process cu...

We report on the ECR-plasma deposition and characterization of silicon nitride film exhibiting high breakdown field strength (>8 MV/cm) for applications in III/V-based compound semiconductor devices. The film deposited at 240°C contains around 13 at.% hydrogen. The hysteresis in mechanical stress, obtained from thermal cycling of the stress in film is negligible. The application of the film is ...