Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C(60)) supersonic beam. Chemical processes, such as C(60) rupture, are ac...

The superior properties of Silicon Carbide (SiC) power devices compared to Silicon (Si) power devices are expected to have a significant impact on the next-generation power electronics systems. Some of these benefits include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems and passive components. In this paper, Si and SiC diode models will be deri...

There is now a large volume of sophisticated steels which rely on silicon as an alloying addition with the purpose of avoiding the precipitation of cementite. But there is also evidence that the silicon can enhance the formation of ε–carbide; the mechanism of this effect is not understood and the absence of appropriate thermodynamic data makes it impossible to conduct calculations. We report he...

OBJECTIVES The aim of this study was to assess personal exposure to fibres, crystalline silica, silicon carbide (SiC) and sulphur dioxide in the Norwegian SiC industry. METHODS Approximately 720 fibre samples, 720 respirable dust samples and 1400 total dust samples were collected from randomly chosen workers from the furnace, processing and maintenance departments in all three Norwegian SiC p...

The effects of p-Sic whisker addition on the microstructural evolution and fracture toughness (K,c) of hot-pressed SIC were investigated. Most of the whiskers added disappeared during the densification process by transformation into the a-phase. The remaining whiskers acted as nuclei for grain growth, resulting in the formation of large tabular grains around the whiskers. The tabular grains aro...

We present an analytical bond-order potential for silicon, carbon, and silicon carbide that has been optimized by a systematic fitting scheme. The functional form is adopted from a preceding work #Phys. Rev. B 65, 195124 !2002"$ and is built on three independently fitted potentials for SiuSi, CuC, and SiuC interaction. For elemental silicon and carbon, the potential perfectly reproduces elastic...

The effect of 53 MeV proton irradiation on the reliability silicon carbide power MOSFETs was investigated. Post-irradiation gate voltage stress applied and early failures in time-dependent dielectric breakdown (TDDB) test were observed for irradiated devices. drain during affects degradation probability by TDDB tests. Proton-induced single event burnouts (SEB) devices which biased close to thei...

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3...

The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100 MPa). T...

The superiority of coronary stent implantation over percutaneous transluminal balloon angioplasty in virtually all lesion subsets has led to the wide use of stents for the percutaneous treatment of coronary lesions 1,2. However, in-stent restenosis remains as a major limitation 3,4. Recent data suggest that neointimal proliferation, the cornerstone of in-stent restenosis 5,6, is related to the ...