We demonstrate sidewall gratings in an ultra-low-loss Si3N4 planar waveguide platform. Through proper geometrical design we can achieve coupling constant values between 13 and 310 cm(-1). The TE waveguide propagation loss over the range of 1540 to 1570 nm is below 5.5 dB/m.

In this study, a type of micro-nano Si3N4 matrix ceramic cutting tool material was successfully prepared by controlling the addition amount TiC0.7N0.3 and hot-pressing sintering temperature. The effects different volume fractions on microstructure, mechanical properties, particle size distribution, relative density tools at same temperature were investigated. results show that makes β-Si3N4 gra...

We discuss heterogeneous integrations and their impacts on computing, networking, and imaging applications. We will review photonic integration technologies including silicon, InP, GaAs, SiO2, Si3N4, and magneto-optical materials such as YIG and BIG. We will address new architectures, new capabilities, and performance enhancement brought into computing, networking, and imaging architectures thr...

The strongest among the all-aluminum alloy series is 7xxx due to its unique composition of alloying elements, making it perfect for automotive and aerospace applications. present research included manufacturing Si3N4 reinforced aluminum (AA) 7068 nanocomposites via stir casting combined with ultrasonication, followed by a bottom pouring technique. reinforcement has been conducted in different f...

Dielectrically loaded thin-film lithium niobate (LiNbO3) on insulator (LNOI) platforms have enabled a range of photonic integrated circuit components, such as high-speed optical modulators, switches, and nonlinear devices, while avoiding the direct etching LiNbO3 thin film. Silicon nitride (Si3N4) is one most attractive dielectric loading materials it has similar refractive index transparency w...

An investigative work was conducted to examine the tensile, flexural and impact strength of carbon fiber reinforced vinyl ester composites filled with different proportions (0, 0.5, 1, 1.5 2) graphitic nitride (g-C3N4) silicon (Si3N4) filler. Composites were fabricated by hand layup method. Results showed an increase in tensile g-C3N4 Si3N4 particles content 1% beyond which decreased. With addi...

The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process of vital importance to modern integrated circuit fabrication technology, has been studied. Selective etching of SiO2-to-Si3N4 in various inductively coupled fluorocarbon plasmas (CHF3 , C2F6/C3F6 , and C3F6/H2) was performed, and the results compared to selective SiO2-to-Si etching. A fluorocarb...