Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers @quantum wells ~QWs!# within tunneling distance of a single-quantum-dot ~QD! layer of an AlGaAs–GaAs–InGaAs–InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2310/cm for...

Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of a...

Monolithic diode grids have been fabricated on 2 cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift...

A sub-harmonic mixer for the 220-325GHz band was developed using a SiC platform first time. An anti-parallel Fermi-level managed barrier diode pair monolithically integrated with waveguide couplers and filters on an epi-layer transferred substrate. The chip assembled in waveguide-input package broadband transimpedance amplifier. lowest obtained noise equivalent power as low 5×10-19W/Hz signal f...

We present comprehensive investigation of the optical properties hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods spectroscopy by means Fourier-transformed photoluminescence photoreflectance are employed to probe transitions in this complex multilayer system. Based on compar...

The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated through spray pyrolysis deposition at 450 °C aqueous solutions containing magnesium nitrate, zinc acetate, erbium gallium and indium nitrate precursors. effects of layer thickness on the diode properties investigated. For deposited films, a combined tiny hexagonal slices small blocks surface morphology was ...