Numerous industrial applications have begun to require higher power apparatus in recent years. Some medium voltage motor drives and utility applications require medium voltage and megawatt power level. For a medium voltage grid, it is troublesome to connect only one power semiconductor switch directly. As a result, a multilevel power converter structure has been introduced as an alternative in ...

With wide-spread application of power electronic converters in high power systems, there has been a growing interest in system reliability analysis and fault-tolerant capabilities. This paper presents a comprehensive review of conventional fault-tolerant techniques regarding power electronic converters in case of power semiconductor device failures. These techniques can be classified into four ...

The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac equation rather than by the Schrödinger equation. As a result, a graphene barrier behaves very differently compared to a common semiconductor barrier. We show that...

The latest results in ultrafast data regeneration and wavelength conversion with SMZ-type all-optical semiconductor switches are reviewed. In these operations, the SMZ-type switch is driven by random data pulses. The fastest bit rate reported to date for such input-data-driven all-optical operation has reached 168 Gb/s. With these all-optical devices, we may be able to build 160-Gb/s OTDM nodes...

The scaling roadmap for realization of more than Moore in semiconductor industry has resulted in emergence of new types of devices, among them, memristive devices seem to be a promising candidate to be applied in various applications such as in memories and neuromorphic chips. However memristive devices face some challenges to be resolved before becoming a mainstream. This paper work analyzes t...

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing...

This paper reviews our recent activities on nanophotonics based on a photonic crystal (PC)/quantum dot (QD)-combined structure for an all-optical device and a metal/semiconductor composite structure using surface plasmon (SP) and negative refractive index material (NIM). The former structure contributes to an ultrafast signal processing component by virtue of new PC design and QD selective-area...

Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop...

In this review a strategy for the design of bioinspired, smart, multiscale interfacial (BSMI) materials is presented and put into context with recent progress in the field of BSMI materials spanning natural to artificial to reversibly stimuli-sensitive interfaces. BSMI materials that respond to single/dual/multiple external stimuli, e.g., light, pH, electrical fields, and so on, can switch reve...

This paper proposes a nine level cascaded multilevel inverter based on the flip flops and logic gates. Generally multilevel inverter is used to achieve the high power by using a series of power semiconductor switches with the several dc voltage sources which is used to perform the power conversion. In this paper the flip flop based CMLI is compared with the conventional CMLI. The flip flops and...