Electroconductive, homogeneous and dense ceramic/semiconductor/metal nanocomposites were obtained by hot press and subsequently machined by wire Electrical Discharge Machining (EDM). The addition of semiconductor and metal phases to a highperformance ceramic material produces nanocomposites which preserve the excellent mechanical properties of the ceramic/metal material while reaching the elect...

incorporate hundreds of millions of semiconductor devices (transistors, diodes, optical devices, etc.). To predict the performance of the VLSI circuits, the current-voltage (I-V) characteristics of the semiconductor device are required. Semiconductor device simulation codes provide a way of predicting I-V curves as device parameters are varied, without having to fabricate the device first. (The...

We propose an on-demand single-photon source for quantum cryptography using a metal–insulator–semiconductor quantum dot capacitor structure. The main component in the semiconductor is a p-doped quantum well, and the cylindrical gate under consideration is only nanometres in diameter. As in conventional metal–insulator–semiconductor capacitors, our system can also be biased into the inversion re...

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are halfmetallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spin...

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thic...

Quantum wire lasers are expected to require very low threshold currents owing to the nature of the 1 D density of states which develops a sharp peak at the band edge and ensures superior laser characteristics. However, carrier relaxation processes in quasi-lD structures may be much slower than in bulk material owing to reduction in the momentum space. For very long relaxation times, these equil...

Metallic single-walled carbon nanotubes (SWNTs or NTs) are the ideal nanometer-scale wire, as they can withstand current densities up to 2 to 3 orders of magnitude higher than copper currently used in electronic chips [1]. These conductive NTs can be utilized as nano-electrodes to electrically contact another nanoscale object, such as a single semiconductor quantum dot (QD) or metallic nanopart...

We provide a self-contained theoretical analysis of the dynamical response of a one dimensional electron system, as confined in a semiconductor quantum wire, within the random phase approximation. We carry out a detailed comparison with the corresponding two and three dimensional situations, and discuss the peculiarities arising in the one dimensional linear response from the non-existence of l...

A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in localized finite self-assembled wire-like quantumdash (Qdash) structures that are varied in sizes and compositions. Effects of such carrier distribution and quasi three-dimensional density of states contribute to a quasisupercontinuum interband lasing characteristic...