Triple-layer omnidirectional reflectors (ODRs) consisting of a semiconductor, a quarter-wavelength transparent dielectric layer, and a metal have high reflectivities for all angles of incidence. Internal ODRs (ambient material's refractive index n >> 1.0) are demonstrated that incorporate nanoporous SiO2, a low-refractive-index material (n = 1.23), as well as dense SiO2 (n = 1.46). GaP and Ag s...

1. Abstract There is a great demand for the ultrafast testing of high-speed electronic/optoelectroi~ic devices in various fields of science and engineering. Such testing can be achieved by electro-optic (EO) sanlpling systems that are capable of sampling picosecond voltage signals with subpicoseco~ld time resolution. Samples of gallium arsenide (GaAs), a semiconductor, with metal-semiconductor-...

The creation and study of non-metallic nanomaterials that exhibit localized surface plasmon resonance (LSPR) interactions with light is a rapidly growing field of research. These doped nanocrystals, mainly self-doped semiconductor nanocrystals (NCs) and extrinsically-doped metal oxide NCs, have extremely high concentrations of free charge carriers, which allows them to exhibit LSPR at near infr...

Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with experimental data. In particular, we investigate the important effect of the contact resistance ρc between the sem...

A reliable configuration for triggering a series string of power metal oxide semiconductor (MOS) devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each metal oxide semiconductor field effect transistor (MOSFET), except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage...

Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is ...

Random telegraph signal ~RTS! amplitude has been studied in a submicron n-channel metal oxide semiconductor field effect transistor as a function of gate voltage. To do so, we have employed a complete simulator of metal oxide semiconductor devices where the effect of a single acceptor trap placed in the silicon oxide was taken into account. The dominant role played by the screening of the charg...

This article provides a comprehensive review of recent (2008 and 2009) progress in gas sensors based on semiconducting metal oxide one-dimensional (1D) nanostructures. During last few years, gas sensors based on semiconducting oxide 1D nanostructures have been widely investigated. Additionally, modified or doped oxide nanowires/nanobelts have also been synthesized and used for gas sensor applic...

photodetectors Ayman Karar, Narottam Das, Chee Leong Tan, Kamal Alameh, Yong Tak Lee, and Fouad Karouta Electron Science Research Institute, Edith Cowan University, Joondalup, WA, Australia School of Photonics Science, Gwangju Institute of Science and Technology (GIST), Gwangju, South Korea Department of Information and Communications, GIST, Gwangju, South Korea Department of Nanobio Materials ...

Metallic films with subwavelength apertures, integrated into a semiconductor by metal-assisted chemical etch (MacEtch), demonstrate enhanced transmission when compared to bare semiconductor surfaces. The resulting "buried" metallic structures are characterized spectroscopically and modeled using rigorous coupled wave analysis. These composite materials offer potential integration with optoelect...