silicon Schottky junctions Yanbin An, Ashkan Behnam, Eric Pop, and Ant Ural Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA Department of Electrical and Computer Engineering, Micro and Nanotechnology Lab, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA Beckman Institute, University of Illinois at Urbana-Champaign,...

High aspect ratio p–n junction semiconductors have displayed great potential for emerging photovoltaics owing to enhanced properties such as improved light absorption or trapping effi ciency and facile carrier collection. [ 1–4 ] In the case of bottomup synthesized p–n junction nanowires, additional advantages come from their single-crystalline structure and reduced materials usage, coupled wit...

5 Equilibrium Carrier Statistics 7 5.1 Calculation of Fermi Level General Case . . . . . . . . . . . . . . . . . . . 7 5.2 Calculation of Fermi Level Special Analytical Cases . . . . . . . . . . . . . 10 5.2.1 CASE(A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2.2 CASE(A.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2.3 CASE(B) . . . . . . ....

The dependence of the photocurrent, in a planar metalsemiconductor-metal photodetectors (MSM), on active layer thickness and incident optical power is investigated using a two-dimensional drift-diffusion model. The model numerically solves the hasic semiconductor equations using appropriate boundary conditions at the Schottky contacts. The calculated results show good agreement with experimenta...

The thermal behavior of a power transistor mounted on a dissipator is considered in order to estimate the transistor temperature junction using a measure of the dissipator temperature only. The thermal transfers between the electric power applied to the transistor, the junction temperature, and the dissipator temperature are characterized by two fractional transfer functions. These models are t...

A method for performing scanning tunneling potentiometry of semiconductor heterojunctions is described. The method yields a direct measure of the electrostatic potential distribution across the interface, with microscopic resolution. The measurement is accomplished by scanning the probe tip at constant sample-tip separation across the junction, and adjusting the sample-tip voltage to maintain a...

Andreev-reflection dominated transport is demonstrated in Al/nIn0.38Ga0.62As superconductor-semiconductor junctions grown by molecularbeam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybr...